Light scribing device and Aligning system and aligning method used for light scribing device

An alignment system and lithography technology, applied in the field of alignment systems, can solve problems affecting alignment accuracy, reduction of diffraction efficiency, attenuation of quasi-signal strength, etc., to improve alignment accuracy, increase capture range, and reduce alignment The effect of the precision effect

Active Publication Date: 2008-03-05
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The system uses a single blazed grating optimized at the center wavelength to separate polychromatic light, which will reduce the diffraction efficiency of other color lights at the edge wavelength, resulting in attenuation of alignment signal strength and affecting alignment accuracy

Method used

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  • Light scribing device and Aligning system and aligning method used for light scribing device
  • Light scribing device and Aligning system and aligning method used for light scribing device
  • Light scribing device and Aligning system and aligning method used for light scribing device

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Embodiment Construction

[0063] FIG. 1 is a schematic structural diagram of an alignment system for a lithography apparatus of the present invention and the overall layout and working principle between the alignment system and an existing lithography apparatus. As shown in Figure 1, the composition of the lithography apparatus includes: an illumination system 1 for providing exposure beams, an alignment mark RM reticle 2 provided with a mask pattern and a periodic structure, a mask for supporting the reticle 2 A mold stage 3, a wafer 6 provided with alignment marks WM of a periodic optical structure, a wafer stage 7 for supporting the wafer 6, and a projection optical system 4 for projecting the mask pattern on the reticle 2 onto the wafer 6 . On the wafer stage 7, there is a reference plate 8 engraved with a reference mark FM. In addition, the lithography apparatus includes an off-axis alignment system 5 for mask and wafer alignment, mirrors 10, 16 and interferometers 11, 15 for measuring the positi...

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Abstract

The system comprises: a light source module, a lighting module, an imaging module, a detection module and a signal processing and positioning module. The imaging module is used for collecting the reflected light and diffracted light of the alignment mark to form a first optical path and a second imaging optical path; after said alignment mark is imaged through the first and second imaging optical path, it is modulated by a first reference grating and second reference grating; the detection module detects the strength of the transmitting light of the alignment mark after modulated by the first reference grating and the strength of the transmitting light of the alignment mark after modulated by the second reference grating to get a first light signal and a second light signal; the signal processing and positioning module uses the amplitude information of the first light signal and the phase information of the second light signal to confirm the location information of the alignment mark.

Description

technical field [0001] The present invention relates to a lithographic device in the field of integrated circuit or other micro device manufacturing, and relates to a lithographic device, an alignment system and an alignment method for a lithographic device Background technique [0002] The photolithography apparatus in the prior art is mainly used in the manufacture of integrated circuits (ICs) or other micro devices. With a photolithographic apparatus, multilayer masks with different mask patterns are sequentially imaged in precise alignment on a photoresist-coated wafer, such as a semiconductor wafer or an LCD panel. Lithography devices are generally divided into two categories, one is a stepping lithography device, the mask pattern is exposed and imaged on one exposure area of ​​the wafer, and then the wafer moves relative to the mask to move the next exposure area to the mask pattern and under the projection objective, the mask pattern is again exposed on another expos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F9/00
Inventor 徐荣伟韦学志李运锋周畅李铁军
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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