Efficient low-cost method for machining monocrystalline and polycrystalline silicon pieces through diamond wire

A polycrystalline silicon wafer and diamond wire technology, which is used in stone processing equipment, fine working devices, working accessories, etc. Frequent problems such as increasing processing efficiency, increasing processing speed, and enhancing processing stability can be achieved.

Inactive Publication Date: 2017-07-11
江苏美科太阳能科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 2. Due to the short reciprocating distance of the steel wire and the high frequency of processing pauses, the cutting force of the steel wire is affected. The processing wire consumption of single crystal is 1 meter to 1.2 per piece, and the processing consumption of polycrystalline is 1.5 to 2 meters per piece; The reciprocating distance is short, the frequency is high, the driving frequency of the wire wheel is high, the failure rate and stability are poor, resulting in high fluctuations in processing yield and equipment failure rate
[0005] 3. The traditionally processed woven wire mesh is not full of grids at the wire inlet end, and has a blank grid at the wire outlet end, forming a slight spiral shape on the surface of the guide, and a slight rotation of the steel wire wire mesh surface, low reuse rate of the diamond surface, and weak cutting ability
The processing method of the steel wire has a short running cycle. When the steel wire is accelerating and decelerating, the wear of the steel wire is lost, which affects the cutting force of the steel wire, resulting in high cost and long processing time.

Method used

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  • Efficient low-cost method for machining monocrystalline and polycrystalline silicon pieces through diamond wire
  • Efficient low-cost method for machining monocrystalline and polycrystalline silicon pieces through diamond wire
  • Efficient low-cost method for machining monocrystalline and polycrystalline silicon pieces through diamond wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A kind of efficient, low-cost diamond wire processing method for single polycrystalline silicon wafer, it is characterized in that, its steps are as follows:

[0034] (1) Assemble the silicon rods to the diamond wire cutting machine;

[0035] (2) Parameter setting of diamond wire cutting machine;

[0036] (A) Set the reciprocating distance of the diamond wire, set the forward distance of the diamond wire to 3700 meters, and the return distance to 3700 meters;

[0037] (B) Cooling water temperature and flow setting, set the cooling water temperature to 20°C, set the flow rate to 7000 liters per hour,

[0038] (C) Network wiring setting, the diamond wire is guided into the fourth wire groove B4 of the wire guide roller through the wire inlet guide wheel, and then wound around the first wire groove A1 of the wire outlet guide roller, and the diamond wire comes out of the first wire groove A1 of the wire outlet guide roller Finally, it is introduced into the fifth slot B5...

experiment example 2

[0042] A kind of efficient, low-cost diamond wire processing method for single polycrystalline silicon wafer, it is characterized in that, its steps are as follows:

[0043] (1) Assemble the silicon rods to the diamond wire cutting machine;

[0044] (2) Parameter setting of diamond wire cutting machine;

[0045] (A) Set the reciprocating distance of the diamond wire, set the forward distance of the diamond wire to 4500 meters, and the return distance to 4500 meters;

[0046] (B) Cooling water temperature and flow setting, set the cooling water temperature to 20°C, set the flow rate to 7000 liters per hour,

[0047] (C) Network wiring setting, the diamond wire is guided into the fourth wire groove B4 of the wire guide roller through the wire inlet guide wheel, and then wound around the first wire groove A1 of the wire outlet guide roller, and the diamond wire comes out of the first wire groove A1 of the wire outlet guide roller Finally, it is introduced into the fifth slot B5...

experiment example 3

[0051] A kind of efficient, low-cost diamond wire processing method for single polycrystalline silicon wafer, it is characterized in that, its steps are as follows:

[0052] (1) Assemble the silicon rods to the diamond wire cutting machine;

[0053] (2) Parameter setting of diamond wire cutting machine;

[0054] (A) The reciprocating distance setting of the diamond wire, set the forward distance of the diamond wire to 4000 meters, and the return distance to 4000 meters;

[0055] (B) Cooling water temperature and flow setting, set the cooling water temperature to 20°C, set the flow rate to 7000 liters per hour,

[0056](C) Network wiring setting, the diamond wire is guided into the fourth wire groove B4 of the wire guide roller through the wire inlet guide wheel, and then wound around the first wire groove A1 of the wire outlet guide roller, and the diamond wire comes out of the first wire groove A1 of the wire outlet guide roller Finally, it is introduced into the fifth slot...

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PUM

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Abstract

The invention relates to an efficient low-cost method for machining monocrystalline and polycrystalline silicon pieces through a diamond wire. The method is characterized by comprising the following steps that (1) a silicon bar is assembled to a diamond wire cutting machine; (2) parameters of the diamond wire cutting machine are set; (3) the cutting machine is started, and the silicon bar is cut; and (4) after the to-be-cut silicon bar is cut, the silicon wafers are taken out. The machining quality is improved, the machining time of monocrystallines and polycrystallines is shortened, diamond wire unit consumption needed by the silicon wafers is reduced, equipment faults are reduced, the machining surface quality is improved, the product manufacturing cost is reduced, and the effective using rate of single equipment is improved.

Description

technical field [0001] The invention relates to a high-efficiency and low-cost diamond wire processing method for single-polycrystalline silicon wafers. Background technique [0002] Diamond wire processing and slicing belongs to the electroplating diamond particles on the surface of steel wire. It adopts high-speed forward and reverse cutting method, and cuts the surface of silicon body with two-body grinding. 30um processing silicon wafers, traditional diamond wire silicon wafer slicing, processing methods are as follows: [0003] 1. The forward distance of the equipment is 350-650 meters, the loop distance is 340-600 meters, the acceleration time is 6-8 meters per square second, the line speed is 22-30 meters per second; the processing table speed is 1.3-2 mm every minute. [0004] 2. Due to the short reciprocating distance of the steel wire and the high frequency of processing pauses, the cutting force of the steel wire is affected. The processing wire consumption of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/02
CPCB28D5/0023B28D5/045B28D7/02
Inventor 陆继波王海庆
Owner 江苏美科太阳能科技股份有限公司
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