Silicon controlled rectifier module with sieve-aperture-shaped low-stress copper lead electrode, and assembling method for silicon controlled rectifier module

Abstract

The invention discloses a silicon controlled rectifier module with a sieve-aperture-shaped low-stress copper lead electrode, and an assembling method for the silicon controlled rectifier module. The silicon controlled rectifier module comprises a metal bottom plate, a ceramic copper-coated plate substrate, a chip and a copper inner lead electrode piece. The contact surface of the copper inner lead electrode piece and the chip is provided with one or more hollow-out long-strip and circular sieve apertures. A leading-out part of the copper inner lead electrode piece is provided with one or more stress buffering bent parts. The copper inner lead electrode piece is directly welded with a cathode, thereby improving the quick heat dissipation capability of the chip, and improving the load capability of a product. The contact surface of the copper inner lead electrode piece and the chip is provided with one or more hollow-out long-strip and circular sieve apertures, thereby reducing the lateral stress between the copper inner lead electrode piece and the chip, improving the reliability of the product on the basis of high heat dissipation, reducing the workflow, and improving the efficiency. The leading-out end of the copper inner lead electrode piece and the chip is provided with one or more stress buffering bent parts, thereby reducing the stress of the product, and improving the reliability of the product.

Description

technical field [0001] The invention relates to a thyristor module with sieve-shaped low-stress copper lead electrodes and an assembly method thereof. Background technique [0002] At present, power thyristor modules are widely used, and the application occasions are also very complicated. With the development of technology, various performance requirements are getting higher and higher. In recent years, many application fields require thyristor modules to have higher di / dt value, stronger cooling capacity. Most of the thyristor modules currently on the market use the method of welding two molybdenum sheets on the upper and lower layers of the chip, and then use the inner lead electrode sheet to lead out. Although this manufacturing method reduces the influence of stress well, the molybdenum material The heat dissipation capability of the chip is poor, which limits the load power of the product; there are also some modules on the market, the anode of the chip is welded to ...

AI Technical Summary

Problems solved by technology

Most of the thyristor modules currently on the market use the method of welding two molybdenum sheets on the upper and lower layers of the chip, and then use the inner lead electrode sheet to lead out. Although this manufacturing method reduces the influence of stress well, the molybdenum material The heat dissipation capability of the chip is poor, which limits the load power of the product; there are also some modules on the market, the anode of the chip is welded to the molybdenum sheet, and the cathode of the chip uses aluminum wire as the lead. However, due to the limitation of the chip layout area, too many aluminum wires cannot be bonded. , the overcurrent capability of this type of package is very limited, so a new package structure is needed on the power thyristor module to meet the two requirements of heat dissipation and overcurrent at the same time

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