Diamond-based normally-off type field effect transistor and preparation method therefor

Abstract

The invention discloses a diamond-based normally-off type field effect transistor. The diamond-based normally-off type field effect transistor comprises a diamond substrate, wherein a monocrystal diamond epitaxial thin film is arranged on the diamond substrate; an active region and a device isolation device which surrounds the active region are arranged on the surface of the monocrystal diamond epitaxial thin film; the active region comprises two-dimensional hole gas; a source, a gate and a drain are arranged above the active region in sequence; conductive channels are formed in the surface of the active region; the conductive channels comprise the channels with alternately arranged hydrogen terminals and oxygen terminals, or alternately arranged hydrogen terminals and fluorine terminals; the oxidization or fluorination degree of the conductive channels are adjusted through a surface processing technology, so that depletion degree of the hydrogen terminal parts close to the oxygen terminals or the fluorine terminals can be further adjusted, so as to realize the switch-off characteristic of a gate bias zero device; and the normally-off type device which can be widely applied in the fields of high voltage and high frequency electronics can be provided.

Description

[0001] 【Technical field】 [0002] The invention belongs to the field of semiconductor devices, in particular to a diamond-based normally-off field effect transistor and a preparation method thereof. [0003] 【Background technique】 [0004] In people's production and life, semiconductor devices play an increasingly important role. The single crystal material for manufacturing semiconductor devices has also experienced four generations of development. As one of the representatives of the fourth-generation semiconductor materials, diamond has excellent properties unmatched by other semiconductor materials. In terms of electricity, diamond has a high band gap, ultra-high breakdown voltage, high Johnson index, high Keyes index, high Baliga index, large electron mobility and hole mobility. Therefore, ultra-high-frequency and ultra-high-power electronic devices made of diamond materials have inherent advantages, and their performance can also surpass the previous three generations o...

AI Technical Summary

Problems solved by technology

This technology is to dope a high concentration of impurities in a very thin layer inside the diamond, but this technology has a great impact on the carrier mobility, which in turn affects the device performance

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