Polyphthalocyanine compound, organic field effect transistor and preparation method of polyphthalocyanine compound
A compound and transistor technology, applied in chemical instruments and methods, organic chemistry, semiconductor/solid-state device manufacturing, etc., can solve problems such as difficulty in applying OFET, synthesis and separation of polyphthalocyanine compounds, and achieve a simple preparation method. Effect
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Embodiment 1
[0035] This embodiment provides a polyphthalocyanine compound whose molecular structural formula is as follows:
[0036]
[0037] The polyphthalocyanine compound of this embodiment is a double-layer sandwich compound based on a planar dinuclear phthalocyanine. The preparation method of the polyphthalocyanine compound is simple, and it is suitable for application as a semiconductor material for an organic field effect transistor. After it is used in an OFET, The electron mobility of the semiconductor material layer reaches 1.0-1.5cm 2 / (V·s).
Embodiment 2
[0039] This embodiment provides a method for preparing a polyphthalocyanine compound, comprising the following preparation steps:
[0040] (1) Synthesis of 4,5-dibromo-o-xylene:
[0041]
[0042] 24 ml (0.2 mol) of o-xylene was dissolved in 30 ml of dry dichloromethane, and 2.5 g (10 mmol) of iodine and 0.6 g (10 mmol) of reduced iron powder were added to the above solution while stirring. The mixture was cooled to zero with an ice bath. In addition, 20.5ml (0.4mol) of liquid bromine was dissolved in 10ml of dry dichloromethane, and the above solution was evenly and slowly dripped into the reaction mixture within six hours with a dropping funnel, so as to invert the solution in 10% sodium hydroxide solution. The funnel absorbs the released hydrogen bromide gas. The reaction was stirred continuously at zero degrees for 38 hours and then at room temperature for 6 hours. The reaction mixture was first washed with 5% sodium hydroxide solution until colorless, and the organic...
Embodiment 3
[0071] This embodiment provides an organic field effect transistor, such as figure 1 As shown, it includes a substrate 10, a gate layer 1, a gate insulating layer 2, a semiconductor material layer 3, and a source drain 4 formed on the substrate 10, wherein the semiconductor material layer is composed of the above-mentioned polyphthalocyanine compound .
[0072] By changing different voltages and selecting different sites for testing, the electron mobility of the above-mentioned semiconductor material layer 3 is obtained as 1.0-1.5 cm 2 / (V·s).
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