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Curable composition, resist material and resist film

A curable composition and resist film technology, applied in the field of resist materials, resist films, and curable compositions, can solve the problems of low curable functional group concentration, low etchability, low transfer accuracy, etc. High dry etching resistance, easy cleaning, good curability and fine patterning effects

Active Publication Date: 2019-11-05
DIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the resin used does not contain silicon and has a low concentration of curable functional groups, there is a concern that the dry etching resistance by oxygen-based gas will be low and the transfer accuracy of the pattern to the substrate will be low.

Method used

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  • Curable composition, resist material and resist film
  • Curable composition, resist material and resist film
  • Curable composition, resist material and resist film

Examples

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Embodiment

[0079] Next, the present invention will be described more specifically by way of examples and comparative examples. In the examples, "parts" and "%" are based on weight unless otherwise specified.

[0080] Hereinafter, the present invention will be described in more detail, but the present invention is not limited to these examples.

Synthetic example 1

[0082]

[0083] Dissolve 1,3-dichloro-1,1,3,3-tetramethyldisiloxane (4.064 g, 0.02 mol), triethylamine (4.048 g, 0.04 mol) in THF under nitrogen atmosphere (60 mL), cooled to 0 °C by ice bath. A solution of 2-hydroxyethyl acrylate (4.644 g, 0.04 mol) in tetrahydrofuran (40 mL) was added dropwise thereto, stirred at 0° C. for 2 hours to react, then the hydrochloride was removed by filtration, and concentrated by evaporation. Purification was carried out by silica gel column chromatography using ethyl acetate and a hexane solvent, and 5.42 g (yield 75%) of a polyfunctional polymerizable monomer (A-1) was obtained by fractional distillation under reduced pressure.

[0084] The physical property values ​​of the obtained compound are as follows.

[0085] 1 H-NMR (300MHz, CDCl 3 ) δ (ppm): 6.42 (dd, 2H, CH=C), 6.16 (m, 2H, C=CH-C=O), 5.87 (dd, 2H, H=C), 4.25 (m, 4H, CH 2 -O-C=O), 3.90 (m, 4H, CH 2 -O-Si), 0.12(m, 12H, Si-CH 3 ).

Synthetic example 2

[0087]

[0088] It was synthesized by the same method as the synthesis of 1,3-bis(acryloyloxyethyloxy)-1,1,3,3-tetramethyldisiloxane. As a raw material, 1,5-dichloro-1,1,3,3,5,5-hexamethyltrisiloxane was used instead of 1,3-dichloro-1,1,3,3-tetramethyldisiloxane silicone.

[0089] The physical property values ​​of the obtained compound are as follows.

[0090] 1 H-NMR (300MHz, CDCl 3 ) δ (ppm): 6.42 (dd, 2H, CH=C), 6.14 (m, 2H, C=CH-C=O), 5.83 (dd, 2H, H=C), 4.25 (m, 4H, CH 2 -O-C=O), 3.89 (m, 4H, CH 2 -O-Si), 0.12(m, 18H, Si-CH 3 ).

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Abstract

An object of the present invention is to provide a curable composition of a resist which is easy to clean after curing, has high dry etching resistance, and can form a precise pattern and is excellent in transfer accuracy, and provides a resist film containing the curable composition And a laminated body, and the pattern formation method using this resist film. The present invention solves the above problems by providing a curable composition containing a polyfunctional polymerizable monomer (A) and the amount of silicon atoms in the nonvolatile content of 10 wt % or more, The polyfunctional polymerizable monomer (A) includes two or more groups having a polymerizable group, and includes at least one group Q having a polymerizable group represented by the formula (1).

Description

technical field [0001] The present invention relates to a curable composition, a resist material and a resist film. Background technique [0002] The photoimprint method has attracted attention as a microfabrication method for efficiently and inexpensively manufacturing electronic devices such as large-scale integrated circuits and liquid crystal displays, patterned media, microchannel devices, biochips, and the like. [0003] In the photoimprint method, the pattern obtained by forming a resist film is used as a template and etched to transfer the pattern to the substrate. In this case, high etching resistance is required for the patterned resist film. Among the photoimprint methods, known are: a method of directly transferring a pattern to a substrate; a two-layer resist method in which a resist film is used as the first resist layer and the substrate has a second resist layer and an underlying substrate; and the like. A method is known in which, for example, a silicon-co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F30/08C07F7/18C08F290/00C08F299/08H01L21/027C08G77/20
CPCC07F7/18C08G77/20C07F7/21C08G77/26C08G77/38G03F7/0002G03F7/027C08F290/148C09D151/08C09D4/00B32B9/005B32B9/04B32B9/041B32B9/045B32B9/06B32B15/04B32B15/043B32B15/08B32B15/082B32B15/085B32B15/09B32B15/12B32B15/18B32B15/20B32B27/06B32B27/08B32B27/10B32B27/20B32B27/24B32B27/281B32B27/283B32B27/30B32B27/302B32B27/32B32B27/36B32B27/365B32B27/42B32B29/002B32B29/005B32B2250/02B32B2250/04B32B2250/05B32B2255/06B32B2255/10B32B2255/12B32B2255/24B32B2255/26B32B2270/00B32B2307/20B32B2307/416B32B2457/14B32B2457/208G03F7/0755C08F222/103C08F230/08C08F30/00C08F290/068C08F299/08G03F7/004G03F7/0045C09D143/04C08F30/08H01L21/027C08F290/08C08G77/22C08F290/00
Inventor 伊部武史矢木直人谷本尚志矢田真
Owner DIC CORP
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