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Array substrate, display substrate manufacturing method, display substrate and display panel

A technology for array substrates and display substrates, applied in semiconductor/solid-state device manufacturing, nanotechnology for information processing, nanotechnology for materials and surface science, etc. , low on-off ratio, etc., to achieve the effect of small leakage current, high on-off ratio, and low ohmic contact resistance

Active Publication Date: 2017-08-25
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the common material used as the ohmic contact layer is n-type doped silicon, but the inventors of the present application have found in the long-term research and development process that the ohmic contact layer of n-type doped silicon has the disadvantages of large leakage current and low switching ratio. Does not conduct well between semiconductor and metal electrodes

Method used

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  • Array substrate, display substrate manufacturing method, display substrate and display panel
  • Array substrate, display substrate manufacturing method, display substrate and display panel
  • Array substrate, display substrate manufacturing method, display substrate and display panel

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Embodiment Construction

[0018] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0019] see figure 1 , figure 1 It is a structural diagram of an embodiment of the array substrate of the present invention, the array substrate includes: a glass substrate 101; a gate electrode layer 102 formed on the glass substrate 101; an insulating layer 103 covering the glass substrate 101 and the gate electrode layer 102 The semiconductor layer 104 is covered on the insulating layer 103; the n-type doped graphene layer 105 is formed on t...

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Abstract

The invention discloses an array substrate, a display substrate manufacturing method, a display substrate and a display panel. The array substrate comprises a glass substrate, a gate electrode layer formed on the glass substrate, an insulating layer covering the glass substrate and the gate electrode layer, a semiconductor layer covering the insulating layer, an n-type doped graphene layer formed on the semiconductor layer, and a source and drain electrode layer formed on the n-type doped graphene layer. Through the scheme, the semiconductor layer and the metal electrode layers can be well conducted, and the performance of semiconductor devices can be remarkably improved.

Description

technical field [0001] The present invention relates to the technical field of plane display, in particular to an array substrate, a method for manufacturing a display substrate, a display substrate and a display panel. Background technique [0002] Liquid crystal display devices have many advantages such as thin body, power saving, and no radiation, and are widely used in various industries such as optics, semiconductors, electrical machinery, chemicals, and materials. [0003] When the metal is in contact with the semiconductor, if the doping concentration on the semiconductor side is high, the width of the barrier region will become thinner, and the carriers can pass through the barrier through the tunneling effect, generating a considerable tunneling current and forming an ohmic contact. . The size of the ohmic contact resistance between the semiconductor and the metal electrode in the liquid crystal display substrate can affect the performance of the semiconductor devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L29/41H01L29/45H01L21/28H01L21/84B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L27/1214H01L27/1259H01L29/401H01L29/413H01L29/458B82Y10/00H01L29/1606H01L29/45H01L29/78618H01L29/66045H01L29/78696
Inventor 于晓平
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD