A photolithographic method for preventing silicon wafer from warping

Abstract

The invention discloses a photoetching method capable of preventing a silicon wafer from being warped. The photoetching method comprises the following steps of cleaning the silicon wafer, evenly spreading front glue, prebaking, exposing, developing, drying, evenly spreading glue at the edge of the front side of the silicon wafer, evenly spreading glue on the back side of the silicon wafer, hardening and corroding. A circle of photoetching glue is evenly spread on the periphery of a figure face after photoetching procedure developing, so that the position of the circle which is coated by the glue is prevented from being corroded, no small notch is formed at the edge of the silicon wafer, and trouble in operation of blade coating glass slurry is avoided; meanwhile, the edge of the silicon wafer is not corroded, so that the mechanical strength of the silicon wafer is improved to a certain extent; furthermore, the uncorroded surface of the circle can reduce effects of glass shrinkage stress on a shape of the silicon wafer in glass shaping; after the glass is shaped, the silicon wafer has no obvious deformation, the surface of the silicon wafer is flat, and operation of following-up procedures is not prone to generating fragments.

Description

technical field [0001] The invention relates to a photolithography method for preventing silicon wafer from warping. Background technique [0002] The photolithographic plate designed at the beginning of the passivation process in the glass has patterns in the entire illuminated area, and the entire surface of the silicon wafer after photolithography has patterns, and the entire surface has grooves and grooves after corrosion. It extends to the edge of the silicon wafer to form many small gaps. When scraping the glass, the scraper is easy to get stuck on the small gaps on the edge of the silicon wafer, resulting in silicon chip fragments. After the silicon wafer is scraped and glass-formed, the glass in the groove shrinks during the melting process of the glass powder during glass molding, so that the side of the silicon wafer engraved with the pattern will be subject to the stress caused by the solidification and shrinkage of the glass, making the silicon wafer It is easy ...

AI Technical Summary

Problems solved by technology

[0002] The photolithographic plate designed at the beginning of the passivation process in the glass has patterns in the entire illuminated area, and the entire surface of the silicon wafer after photolithography has patterns, and the entire surface has grooves and grooves after corrosion. It extends to the edge of the silicon wafer to form many small gaps. When scraping the glass, the scraper is easy to get stuck on the small gaps on the edge of the silicon wafer, resulting in silicon chip fragments

After the silicon wafer is scraped and glass-formed, the glass in the groove shrinks during the melting process of the glass powder during glass molding, so that the side of the silicon wafer engraved with the pattern will be subject to the stress caused by the solidification and shrinkage of the glass, making the silicon wafer It is easy to produce the phenomenon of chip warping, which is very difficult for the subsequent photolithography and sandblasting, and it is easy to cause silicon chip fragments during the operation