Tunnel magneto-resistive type accelerometer device and method based on change of magnetic field direction

Abstract

The invention discloses a tunnel magneto-resistive type accelerometer device and a measurement method thereof based on the change of the magnetic field direction. According to the invention, not only the device is small in size and easy to machine, but also the measurement sensitivity and the measurement precision are also improved obviously. The device comprises a top-layer structure, a bottom-layer structure, a middle-layer structure and the four anchor points. The four anchor points are arranged at the four corners of the bottom-layer structure, and are connected between the top-layer structure and the bottom-layer structure. The middle-layer structure is supported between the bottom-layer structure and the top-layer structure through the four anchor points. According to the invention, a local magnetic field is enabled to be stronger based on the generation of the magnetic field perpendicular to a tunnel magneto-resistive type sensor and the greater thickness of an excitation structure, so that the tunnel magneto-resistive effect is ensured to be higher in sensitivity. Meanwhile, due to the adoption of four flexible lever and support beams for the connection of mass blocks and anchor points, the sensitivity and the measurement precision are obviously improved under the action of levers. Moreover, the accelerometer is simple in structure, small in size and easy to machine. The tunnel magneto-resistive type accelerometer device has the advantages of controllable magnetic field, adjustable sensitivity, and the like.

Description

technical field [0001] The invention belongs to the technical field of acceleration measurement, relates to a micro-electromechanical system (MEMS) and a micro-inertial device, and more specifically relates to a tunnel reluctance accelerometer device and a measurement method based on changing the direction of a magnetic field. Background technique [0002] Quantum tunneling is a quantum property in which microscopic particles such as electrons are able to pass through "walls" that they would not otherwise be able to pass through. The tunnel magnetoresistance effect means that in the "tunnel junction" composed of a ferromagnetic thin film and an intermediate insulating layer, the possibility of electron tunneling through the insulating layer is correlated with the relative magnetization direction of the ferromagnetic layer, and its macroscopic performance is the size of the resistance , the resistance has extremely high resistance sensitivity to changes in the direction of th...

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Problems solved by technology

[0003] At present, the tunnel magneto-resistive accelerometer devices in the prior art usually have problems such as bulky, low measurement accuracy and low sensitivity, which cannot meet the application requirements

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