A method for reducing the interaction between inductive motor loads and drives

Abstract

The invention relates to a method for weakening the interaction between an inductive motor load and a driver, and the method comprises the steps: measuring the high-frequency impedance characteristic curve of an inductive motor comprising a connection cable, and simulating the high-frequency characteristics of the inductive motor load through an LRC resonant circuit; measuring the relation between the switching voltage reversing time and a load current in a driver; selecting the proper switching voltage reversing time; finally calculating an additional inductor through the obtained switching voltage reversing time, wherein one end of the inductor is connected to a neutral point of a bridge arm and the other end of the inductor is connected to the cable, thereby achieving a purpose that the LRC resonant current meets the needed resonant frequency. The method can reduce the impedance characteristics caused by the skin effect and parasitic parameters of a state winding (such as turn-to-turn capacitance). In other words, the interaction between the inductive motor load and the motor driver is weakened, and the response effect, reflected by the curve, of the motor driver is better. The method reduces the adverse effect caused by the high-speed switching of an MOSFET on the switching transient performances and the motor load.

Description

technical field [0001] The invention relates to the field of motor control, in particular to a method for reducing the interaction between an inductive motor load and a driver. Background technique [0002] Motor drivers are constantly developing towards high efficiency, miniaturization, low cost, high ambient temperature and high reliability, and may need to meet the requirements of several higher performance indicators. However, due to the limitations of silicon (Silicon, Si) power devices, the blocking voltage, forward on-state resistance, operating junction temperature, and switching speed of Si devices are close to their theoretical limits. In the application of high-frequency and high-power motor drives, it is even more difficult, which limits the improvement of drive performance. Wide-bandgap semiconductor power devices represented by silicon carbide (Silicon Carbide, SiC) materials have higher voltage levels, faster switching speeds, higher operating junction temper...

AI Technical Summary

Problems solved by technology

In addition, the high dv / dt caused by high-speed switching of wide bandgap devices causes the motor windings to bear a large current and reduces the reliability of the motor

[0005] For high-power induction motors with long connecting cables, the impedance characteristics at high frequencies are worse

Therefore, for the handling of inductive loads including connected cable motors, there is a lack of methods in the prior art that can reduce the adverse effects of high-speed switching of MOSFETs on switching transient performance and motor loads.

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