Gas transmission device, reaction chamber and hvpe equipment for hvpe
A technology of gas transmission and reaction chamber, which is applied in the direction of chemically reactive gas, crystal growth, gaseous chemical plating, etc., can solve the problems of poor uniformity of epitaxial layer thickness components, etc., to avoid substrate contamination, fast flow rate, avoid cracked effect
Active Publication Date: 2021-07-09
镓特半导体科技(上海)有限公司
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Problems solved by technology
[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a gas transmission device for HVPE, a reaction chamber and HVPE equipment, which are used to solve the problem of poor uniformity of the thickness of the epitaxial layer and its components in the prior art. question
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[0042] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.
[0043] see Figure 1 to Figure 3 , The first embodiment of the present invention relates to a gas delivery device for HVPE. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present...
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Abstract
The present invention provides a gas transmission device for HVPE, a reaction chamber and HVPE equipment, wherein the gas transmission device for HVPE at least includes: a metal-containing precursor gas passage pipeline, a shielded gas passage pipeline, and a nitrogen-containing precursor gas passage pipeline ; wherein: the nitrogen-containing precursor gas passage pipe is sleeved outside the shielding gas passage pipe, and the shielding gas passage pipe is sleeved outside the metal-containing precursor gas passage pipe to form a coaxial three-pipe structure ; The metal-containing precursor gas passage pipeline is provided with a hole-shaped end near the outlet. The invention improves the mixing uniformity of the nitrogen-containing precursor gas and the metal-containing precursor gas, and improves the uniformity of the gas flow, thereby improving the thickness of the epitaxial layer grown on the substrate surface and the uniformity of its components, while avoiding the The metal-containing precursor gas and the nitrogen-containing precursor gas are epigenetically grown at the outlet of the gas delivery device.
Description
technical field [0001] The invention relates to the technical field of vapor phase epitaxy deposition, in particular to a gas transmission device for HVPE, a reaction chamber and HVPE equipment. Background technique [0002] Hydride Vapor Phase Epitaxy (HVPE, Hydride Vapor Phase Epitaxy) equipment is a compound growth process equipment, mainly used in a high temperature environment of about 1000 degrees through such as H 2 , HCl and other hydride gases to epitaxially grow a thick film or crystal such as GaAs or GaN on the surface of the substrate. [0003] The most important indicator of epitaxial layer growth is the uniformity of its growth thickness and its composition. This requires uniform mixing of precursor gases in the reaction zone above the substrate and better gas flow uniformity. However, using existing HVPE equipment, when growing epitaxial layers on the surface of one or more substrates, the mixing of the precursor gases in the reaction zone is often not unifo...
Claims
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IPC IPC(8): C23C16/455C23C16/34C30B25/14C30B29/38
CPCC23C16/34C23C16/45517C30B25/14C30B29/38
Inventor 特洛伊·乔纳森·贝克谢宇罗晓菊王颖慧
Owner 镓特半导体科技(上海)有限公司