Preparation method of flexible tin oxide photodetector

Abstract

The invention discloses a preparation method of a flexible tin oxide photodetector. The method comprises the following steps of: (10) substrate cleaning: carbon paper is cut into a required size, the carbon paper is cleaned with acetone, absolute ethyl alcohol and deionized water, and then, the cleaned carbon paper is subjected to ultrasonic cleaning; (20) mixed solution preparation: Na3C6H5O7.2H2O powder and SnCl2.2H2O powder are dissolved in the deionized water and the absolute ethyl alcohol according to a ratio, and the powder, the deionized water and the absolute ethyl alcohol are stirred, so that a mixed solution is obtained; (30) nanosheet assembly: the carbon paper is arranged in a reactor filled with the mixed solution so as to be subjected to a hydrothermal reaction, and the carbon paper is taken out from the reactor, and then, is cooled naturally to indoor temperature; and (40) finished product drying: the carbon paper is removed from the reactor, is washed with the deionized water or the absolute ethyl alcohol by means of ultrasound, and is dried, so that the photodetector of which the flexible substrate is provided with Sn3O4 nanosheets can be obtained. The preparation method of the flexible tin oxide photodetector of the invention has the advantages of simple process, high output and low cost.

Description

technical field [0001] The invention belongs to the technical field of photoelectric functional materials, in particular to a method for preparing a flexible tin oxide photodetector with simple process, high yield and low cost. Background technique [0002] Tin oxide has aroused great research interest because of its broad application prospects in gas sensing, optoelectronics and other fields. But due to SnO and SnO 2 It has a large energy bandwidth, which is limited in the field of optoelectronics. The mixed valence state of tin oxide has a higher 2 Smaller energy band width is expected to achieve high photoelectric response under visible light, such as: Sn 2 o 3 ,Sn 3 o 4 Wait. [0003] In the prior art, methods for improving photoelectric properties include: increasing photosensitivity, improving response to light of different wavelengths, increasing photoresponse rate, inducing photoresponse, and changing photoconductive direction. Although the above mainstream m...

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Problems solved by technology

Although the above mainstream methods have improved the photoelectric performance of semiconductors to a certain extent, there are still problems such as cumbersome steps, small amount of products obtained, and high cost, which also limit their application in the industrial field.

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