Transient voltage inhibitor and manufacturing method thereof

A technology of transient voltage suppression and manufacturing method, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, circuit, etc., can solve the problems of increasing device manufacturing cost, large additional capacitance, reducing device performance, etc., to reduce manufacturing cost. , The effect of small device area and low process difficulty

Active Publication Date: 2017-11-10
绍兴市秀臻新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the additional capacitance introduced by these two structures is large, and the device area is large, which reduces the device performance and increases the device manufacturing cost.

Method used

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  • Transient voltage inhibitor and manufacturing method thereof
  • Transient voltage inhibitor and manufacturing method thereof
  • Transient voltage inhibitor and manufacturing method thereof

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Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] In order to solve the technical problems of the prior art transient voltage suppressors such as large area, high process difficulty and high device manufacturing cost, the present invention provides an improved transient voltage suppressor, please refer to figure 1 and figure 2 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention, figure 2 yes figure 1 The schematic diagram of the equivalent circuit of the transient voltage suppressor 100 is shown. ...

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Abstract

The invention relates to a transient voltage inhibitor and a manufacturing method thereof. The transient voltage inhibitor comprises a P-type substrate, a P-type epitaxial layer formed on the P-type substrate, a P-type isolation well formed in the P-type epitaxial layer, an N-type doping region formed at a surface of the P-type epitaxial layer, and a first P-type doping region and a second P-type doping region formed on a surface of the N-type doping region, wherein the first P-type doping region and the second P-type doping region are arranged at two ends of the N-type doping region, the first P-type doping region and the N-type doping region form a first Zener diode, and the second P-type doping region and the N-type doping region form a second Zener diode. The transient voltage inhibitor is advantaged in that the device area is small, process difficulty is low, manufacturing cost is low, and protection characteristics and reliability are relatively high.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor devices are increasingly miniaturized, high-density, and multi-functional, electronic devices are increasingly vulnerable to voltage surges, which can even cause fatal injuries. Transient current spikes can be ind...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/866H01L21/329
CPCH01L27/0255H01L29/66106H01L29/866
Inventor 车成凯
Owner 绍兴市秀臻新能源科技有限公司
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