A lateral double diffused metal oxide semiconductor device
An oxide semiconductor, lateral double diffusion technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of early breakdown of the terminal part of LDMOS devices, and achieve increased breakdown voltage, low dielectric constant, and high breakdown. The effect of voltage
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[0022] A lateral double-diffused metal oxide semiconductor device, comprising a device part A1, a terminal part A2, and a P-type substrate 1 as a device part substrate and a terminal part substrate, and a device part is arranged above the P-type substrate 1 The high-voltage N-type region 2 of the high-voltage N-type region and the terminal part of the high-voltage N-type region is provided with an N-type drift region 3 above the high-voltage N-type region 2, a P-type body region 4A1 located in the device part, and a device located in the terminal part The P-type body region 4A2 formed by diffusion of part of the P-type body region 4A1 is also provided with a gate oxide layer 8 above the high-voltage N-type region 2, and a polysilicon gate field plate 9 is provided above the gate oxide layer 8. The device part also includes a The N-type drain region 6 in the N-type drift region 3 and the N-type source region 5 and the P-type region 7 arranged in the P-type body region 4A1, in th...
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