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A kind of epitaxial wafer of light-emitting diode and its preparation method

A technology of light-emitting diodes and epitaxial wafers, which is applied in the field of optoelectronics and can solve problems such as large warpage of epitaxial wafers.

Active Publication Date: 2019-05-07
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem of large warpage of the epitaxial wafer in the existing GaN-based LED, an embodiment of the present invention provides an epitaxial wafer of a light-emitting diode and a preparation method thereof

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  • A kind of epitaxial wafer of light-emitting diode and its preparation method
  • A kind of epitaxial wafer of light-emitting diode and its preparation method
  • A kind of epitaxial wafer of light-emitting diode and its preparation method

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Embodiment Construction

[0023] In order to make the objectives, technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0024] figure 1 It is a schematic structural diagram of an epitaxial wafer of a light emitting diode provided by an embodiment of the present invention, as shown in figure 1 As shown, the epitaxial wafer includes a substrate 10 and a buffer layer 20, a u-type GaN layer 30, an n-type GaN layer 40, a stress release layer 50, an active layer 60 and a p-type GaN layer 70 stacked on the substrate 10 in sequence. , wherein the stress release layer 50 includes multiple layers of In alternately stacked x Ga (1-x) N layer 51 and multilayer n-type Al y Ga (1-y) N layer 52, and multiple layers of In x Ga (1-x) The composition content of In in the N layer 51 increases layer by layer, and the active layer 60 includes multiple layers of In alternatel...

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Abstract

The invention discloses an epitaxial wafer of a light-emitting diode and a preparation method thereof, belonging to the technical field of optoelectronics. The epitaxial wafer includes a substrate, a buffer layer, a u-type GaN layer, an n-type GaN layer, a stress release layer, an active layer, and a p-type GaN layer, and the stress release layer includes alternating In x Ga (1‑x) N-layer and n-type Al y Ga (1‑y) N layer, due to the In close to the n-type GaN layer x Ga (1‑x) The composition content of In in the N layer is smaller than the In near the active layer x Ga (1‑x) The composition content of In in the N layer, the stress release layer will reduce the depression of the epitaxial wafer and appear a small degree of protrusion, In m Ga (1‑m) The composition content of In in the N well layer is less than that of In x Ga (1‑x) The component content of the N layer, when growing the active layer, the active layer makes the epitaxial wafer have a tendency to sag towards the substrate side, which offsets the protrusion formed after the growth of the stress release layer, and reduces the warpage of the epitaxial wafer.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an epitaxial wafer of a light emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens , signal lights, backlight, toys and other fields. The core structure of the LED is the epitaxial wafer, and the production of the epitaxial wafer has a great influence on the photoelectric characteristics of the LED. [0003] Epitaxial wafers of GaN-based LEDs generally include a sapphire substrate and a buffer layer, u-type GaN layer, n-type GaN layer, active layer and p-type GaN layer stacked on the sapphire substrate in sequence. [0004] In the GaN-based LED epitaxial waf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/14H01L33/00
CPCH01L33/007H01L33/12H01L33/145
Inventor 武艳萍
Owner HC SEMITEK CORP
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