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Aluminum-gallium arsenide structure-based broadband perfect absorber

A gallium arsenide, wide-band technology, applied in the fields of optoelectronic materials and photonics, can solve the problems of poor repeatability of light absorption response, etc., and achieve the effects of simple structure, easy preparation, and wide application prospects

Inactive Publication Date: 2017-11-21
JIANGXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the shortcomings of the above-mentioned perfect optical absorber, the present invention provides a wide-band optical perfect absorber based on an aluminum-gallium arsenide structure working in the near-infrared band, aiming at introducing gallium arsenide materials and utilizing the electromagnetic resonance characteristics of gallium arsenide , using the optical resonance effect of the GaAs resonant structure with a single structure size and its strong coupling effect with the incident light, the perfect absorption of light in a wide band is realized, which greatly simplifies the structural unit of the absorber and overcomes the previous light The structural design of the perfect absorber is complex and the repeatability of the light absorption response is poor.

Method used

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  • Aluminum-gallium arsenide structure-based broadband perfect absorber
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  • Aluminum-gallium arsenide structure-based broadband perfect absorber

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Embodiment 1

[0045] refer to figure 2 , figure 2 It is the light absorption diagram of the broadband light perfect absorber based on the aluminum-gallium arsenide structure in this embodiment. The thickness of the aluminum film layer is 100nm, and the thickness of the gallium arsenide film layer is 30nm. Gallium arsenide particles are cylindrical structures with a diameter of 380nm and a thickness of 30nm. The gallium arsenide grain array period size is 500nm. It can be seen from the figure that the maximum absorption rate reaches 99.8%, and the absorption rate in the spectral range from 615nm to 960nm exceeds 80%, indicating that the aluminum-gallium arsenide structure produces a wide-band light absorption response.

Embodiment 2

[0047] refer to image 3 , image 3 It is the light absorption diagram of the broadband light perfect absorber based on the aluminum-gallium arsenide structure in this embodiment. The thickness of the aluminum film layer is 100nm, and the thickness of the gallium arsenide film layer is 20nm. Gallium arsenide particles are cylindrical structures with a diameter of 380nm and a thickness of 30nm. The gallium arsenide grain array period size is 500nm. It can be seen from the figure that by adjusting the thickness of the gallium arsenide film layer in the absorber, the maximum absorption rate reaches 99.9%, and the absorption rate in the spectral range from 518nm to 888nm exceeds 80%, indicating that under this structural parameter, The Al-GaAs structure can also provide a broadband photoperfect absorption response.

Embodiment 3

[0049] refer to Figure 4 , Figure 4 It is the light absorption diagram of the broadband light perfect absorber based on the aluminum-gallium arsenide structure in this embodiment. The thickness of the aluminum film layer is 100nm, and the thickness of the gallium arsenide film layer is 40nm. Gallium arsenide particles are cylindrical structures with a diameter of 380nm and a thickness of 30nm. The gallium arsenide grain array period size is 500nm. It can be seen from the figure that by adjusting the thickness of the gallium arsenide film layer in the absorber, the size of the gallium arsenide grain and the size of the array period, the absorption rate in the spectral range from 702nm to 1010nm is more than 80%, indicating that in this structure Under the same parameters, the Al-GaAs structure can also provide a wide-band light perfect absorption response, and in addition, the maximum absorption rate reaches 96.5%.

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Abstract

The invention discloses an aluminum-gallium arsenide structure-based broadband perfect absorber, and belongs to the field of a photoelectric material. The absorber comprises a substrate, an aluminum film layer and a gallium arsenide structural layer from the bottom up in sequence; and the gallium arsenide structural layer comprises a gallium arsenide particle array and a gallium arsenide film layer. By virtue of reasonable design of the geometrical dimensions and lattice periods of the gallium arsenide structure, electromagnetic wave coming to the surface of the structure can be fully absorbed; the absorber based on a local optical resonance mode of the gallium arsenide particles and a low-order optical guided wave model of the gallium arsenide film layer has the characteristics of simple structure, near infrared waveband absorption and broadband absorption; and in addition, gallium arsenide adopted in the structure is a semiconductor material, so that the application and development of the absorber in the fields of photoelectric detection, photoelectric conversion, photoproduction electron and thermo electron generation and collection, electromagnetic energy absorption and the like can be promoted.

Description

technical field [0001] The invention relates to the fields of optoelectronic materials, photonics and the like, in particular to a wide-band optical perfect absorber based on an aluminum-gallium arsenide structure. Background technique [0002] The infrared band in the electromagnetic spectrum is usually divided into three bands: near-infrared (0.76 μm-2.5 μm), mid-infrared (2.5 μm-25 μm) and far-infrared (25 μm-1000 μm). The near-infrared spectrum region is consistent with the combined frequency of the vibration of hydrogen-containing groups (N-H, O-H, C-H) in organic molecules and the absorption region of all levels of frequency multiplication. By testing the near-infrared spectrum of the sample, the characteristic information of the molecules in the sample can be obtained. Moreover, the use of spectroscopic technology for sample analysis has the advantages of fast, convenient, efficient, accurate, no consumption of chemical reagents, no pollution to the environment, and n...

Claims

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Application Information

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IPC IPC(8): H01L31/02H01L31/0216H01L31/0352
CPCH01L31/02162H01L31/02H01L31/0352
Inventor 刘正奇刘桂强刘晓山
Owner JIANGXI NORMAL UNIV
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