Forming method of metal isolation gates
A metal isolation and metal layer technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of poor refraction and reflection of metal isolation grids, and low isolation performance of metal isolation grids, so as to avoid filling voids and improve performance and yield, easy to fill the effect
Active Publication Date: 2017-11-28
WUHAN XINXIN SEMICON MFG CO LTD
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[0004] The purpose of the present invention is to provide a method for forming a metal barrier to solve the problems in the prior art that the isolation performance of the metal barrier is not high, and the refraction and reflection of light passing through the metal barrier are not good.
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[0027] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0028] refer to figure 1 , which is a flow chart of the method for forming the metal isolation barrier provided in the embodiment, such as figure 1 As shown, the forming method of the metal isolation barrier includes:
[0029] S1: providing a substrate, on which a metal layer and a barrier layer are sequentially formed;
[0030] S2: Etching the barrier layer and the metal layer with a partial thickness to form a trench;
[0031] S3: Etching the remaining metal layer in the trench to form a polymer, and the po...
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Abstract
The invention provides a forming method of metal isolation gates. The forming method comprises steps of successively forming a metal layer and a resisting layer on a substrate; etching the resisting layer and parts of the metal layer firstly so as to rapidly forming an opening; then, etching the rest metal layer in the opening; and etching the metal layer in the opening to form a trough while forming polymers on the side wall of the trough, wherein the polymers cover the side wall of the trough so as to protect the side wall of the trough against further etching. According to the invention after the etching is finished, the side wall of the trough has a vertical profile and is easy to fill, so holes are prevented from being generated when filling the trough later, and performance and yield of a device are improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a metal isolation gate. Background technique [0002] Metal isolation barrier, which has a plurality of metal grids, each metal grid surrounds each pixel, and prevents incident light from passing through the incident pixel to illuminate adjacent pixels, thereby creating efficient optical isolation between pixels and avoiding Electrical crosstalk noise between adjacent pixels. Since the metal barrier structure itself absorbs little light, by reflecting one polarization of natural light and allowing the other to pass through, the reflected light can be recycled again through polarization rotation, so it has great potential in liquid crystal displays. , and can produce image sensors and optical lenses with high pixel size and high resolution. [0003] The isolation performance of the metal isolation grid formed in the prior art is not high, and the r...
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IPC IPC(8): H01L23/552
CPCH01L23/552
Inventor 刘长林刘志攀丁振宇
Owner WUHAN XINXIN SEMICON MFG CO LTD