A method for rapid preparation of organic electronic components
A technology of organic electronics and components, which is applied in the field of post-processing technology of functional layers in electronic components, can solve the problems of high equipment maintenance costs, and achieve the effect of ensuring performance and protecting appearance
Active Publication Date: 2021-01-12
SHANGHAI MI FANG ELECTRONICS LTD
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Problems solved by technology
CN102214737B discloses a method for preparing a compound thin film for solar cells, wherein the compound thin film is placed in a resistive heat source and a tungsten halogen lamp heat source area and annealed for a certain period of time, the annealing time is 1-6min, and the annealing temperature is 500-600°C ℃, but the whole process is carried out in a closed state, and the equipment maintenance cost is high
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Embodiment 1
[0032] Print silver on the polyimide substrate, using silver ink from Kunshan Haisi (purchased from Kunshan Haisi Electronics Co., Ltd., model Jet-600C); use a 500W halogen tungsten lamp to irradiate at a height of 2cm from the substrate for 5 seconds, and instantly When the temperature reaches 300°C, the annealing procedure that should have been performed on a heating table at 150°C for 10 minutes is completed.
[0033] Print PVP (poly(4-vinylphenol)) on a polyimide substrate, and use a 500W tungsten-halogen lamp to irradiate it at a height of 2cm from the substrate for 15 seconds, and then complete the annealing that should have been heated on a heating table at 180°C 2-hour annealing program.
[0034] The square resistance of silver after treatment according to the above conditions and the capacitance data of the capacitor device with PVP as the insulating layer were tested respectively, and compared with the properties of the materials obtained after traditional heating tr...
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Abstract
The application of the present invention relates to a method for quickly preparing organic electronic components, including forming a first conductive layer on a flexible substrate; post-processing the first conductive layer; forming an insulating layer on the post-treated conductive layer; performing post-treatment on the insulating layer; forming a second conductive layer on the post-treated insulating layer; performing post-treatment on the second conductive layer; forming a semiconductor layer on the treated second conductive layer; Post-processing. In the present invention, the post-treatment of the film can be completed within a few seconds by irradiation with a tungsten-halogen lamp, and the post-treatment time in the entire transistor preparation process is shortened from nearly 3 hours to 15 seconds by traditional heating and annealing, and the performance of the obtained electrode layer and insulating layer The performance is equivalent to that obtained by traditional heating annealing. The method of the invention shortens the time required for the preparation of organic electronic components, greatly improves production efficiency, and is beneficial to industrialization.
Description
technical field [0001] The present invention relates to the field of manufacturing organic electronic components, in particular, to the field of manufacturing organic thin film transistors and capacitors, and more specifically, to the post-treatment process of functional layers in electronic components such as thin film transistors and capacitors. Background technique [0002] Electronic components include electronic components and electronic devices. The electronic components themselves do not generate electrons and have no control and conversion effects on voltage and current, so they are also called passive devices, such as resistors, capacitors, inductors, etc.; electronic devices themselves can Generate electrons, control and transform voltage and current (detection, rectification, amplification, switching, voltage stabilization, signal modulation), so they are also called active devices, such as transistors, electronic tubes, and integrated circuits. [0003] Capacitor...
Claims
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IPC IPC(8): H01L51/05H01L51/40H01L21/02H01L23/64H01L21/67
CPCH01L28/40H01L21/67115H10K10/462
Inventor 李胜夏魏勤蓝河
Owner SHANGHAI MI FANG ELECTRONICS LTD