Drive protection circuit for power switch transistor, integrated circuit, IPM module and air conditioner

A technology for driving protection circuits and power switching tubes, which is applied in the direction of output power conversion devices, circuits, electronic switches, etc., and can solve the problems of overvoltage protection at the output end of the drive circuit, insufficient gate protection of MOSFETs, and MOSFETs with wide bandgap materials. Damage and other problems, to achieve the effect of reducing overvoltage failure of the controlled end, improving drive reliability, and optimizing drive parameters

Inactive Publication Date: 2017-12-08
GD MIDEA AIR-CONDITIONING EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For MOSFETs, especially wide bandgap material MOSFETs, the gate protection is insufficient. When the driving voltage is high, it is easy to cause damage to wide bandgap material MOSFETs. The des

Method used

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  • Drive protection circuit for power switch transistor, integrated circuit, IPM module and air conditioner
  • Drive protection circuit for power switch transistor, integrated circuit, IPM module and air conditioner
  • Drive protection circuit for power switch transistor, integrated circuit, IPM module and air conditioner

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Embodiment Construction

[0030] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0031] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain that it is in a specific posture (as shown in the drawings). If the specific posture changes, the relative positional relationship, movement, etc. of the components below will also change the directional indication accordingly.

[0...

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Abstract

The invention discloses a drive protection circuit for a power switch transistor, an integrated circuit, an IPM module and an air conditioner. The drive protection circuit for the power switch transistor comprises a signal input end, a first protection circuit, a signal output end, a voltage division circuit, a switch and a gating control circuit. The gating control circuit is used for controlling the switch to be switched on/switched off when it is detected that a voltage of a drive signal input by the signal input end is greater than a preset voltage value, thereby reducing the voltage of the drive signal output by the signal output through the voltage division circuit. According to the drive protection circuit of the power switch transistor, a mode of actively controlling a drive voltage is employed; and a first protection circuit is flexibly controlled to be connected with/separated away from the signal output end, so the drive signal output to a controlled end of the power switch transistor does not exceed an allowed drive voltage circuit; and the drive reliability for a wide band gap material power switch transistor is improved.

Description

Technical field [0001] The invention relates to the field of air conditioners, and in particular to a drive protection circuit of a power switch tube, an integrated circuit, an IPM module and an air conditioner. Background technique [0002] At present, the introduction of wide band gap materials represented by SiC (silicon carbide) and GaN (gallium nitride) has led the development of a new generation of semiconductor devices. Wide band gap materials are widely used in high-pressure, high-temperature, high-efficiency and high-power-density applications because of their high temperature resistance, high blocking voltage, high operating frequency and low on-state loss. [0003] However, since the forbidden band width and breakdown field strength of wide band gap materials are much higher than those of traditional semiconductor materials such as silicon, the parasitic capacitance of semiconductor devices with wide band gap materials (such as MOSFET and IGBT) under the same withstand v...

Claims

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Application Information

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IPC IPC(8): H03K17/081H02M1/08
CPCH03K17/08104H02M1/08H03K17/08112H03K17/08116
Inventor 刘东子冯宇翔
Owner GD MIDEA AIR-CONDITIONING EQUIP CO LTD
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