Drive protection circuit for power switch transistor, integrated circuit, IPM module and air conditioner

Abstract

The invention discloses a drive protection circuit for a power switch transistor, an integrated circuit, an IPM module and an air conditioner. The drive protection circuit for the power switch transistor comprises a signal input end, a first protection circuit, a signal output end, a voltage division circuit, a switch and a gating control circuit. The gating control circuit is used for controlling the switch to be switched on / switched off when it is detected that a voltage of a drive signal input by the signal input end is greater than a preset voltage value, thereby reducing the voltage of the drive signal output by the signal output through the voltage division circuit. According to the drive protection circuit of the power switch transistor, a mode of actively controlling a drive voltage is employed; and a first protection circuit is flexibly controlled to be connected with / separated away from the signal output end, so the drive signal output to a controlled end of the power switch transistor does not exceed an allowed drive voltage circuit; and the drive reliability for a wide band gap material power switch transistor is improved.

Description

Technical field [0001] The invention relates to the field of air conditioners, and in particular to a drive protection circuit of a power switch tube, an integrated circuit, an IPM module and an air conditioner. Background technique [0002] At present, the introduction of wide band gap materials represented by SiC (silicon carbide) and GaN (gallium nitride) has led the development of a new generation of semiconductor devices. Wide band gap materials are widely used in high-pressure, high-temperature, high-efficiency and high-power-density applications because of their high temperature resistance, high blocking voltage, high operating frequency and low on-state loss. [0003] However, since the forbidden band width and breakdown field strength of wide band gap materials are much higher than those of traditional semiconductor materials such as silicon, the parasitic capacitance of semiconductor devices with wide band gap materials (such as MOSFET and IGBT) under the same withstand v...

AI Technical Summary

Problems solved by technology

For MOSFETs, especially wide bandgap material MOSFETs, the gate protection is insufficient. When the driving voltage is high, it is easy to cause damage to wide bandgap material MOSFETs. The design of the circuit does not consider the overvoltage protection of the output of the drive circuit, so it is easy to cause insufficient protection for the MOSFET gate of the wide bandgap material

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