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Photoresist patterning process on structures

A photoresist and production process technology, which is applied in the photoengraving process of the pattern surface, the exposure device of the photoengraving process, and the processing of photosensitive materials, etc. Dimensional accuracy and other issues to achieve the effect of reducing reflectivity

Active Publication Date: 2020-12-15
POWERCHIP SEMICON MFG CORP
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  • Abstract
  • Description
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Problems solved by technology

[0003] However, in many cases, the optical proximity correction process is not enough to improve the profile and CD accuracy of the formed photoresist pattern

Method used

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  • Photoresist patterning process on structures
  • Photoresist patterning process on structures
  • Photoresist patterning process on structures

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Embodiment Construction

[0026] Figure 1A to Figure 1D It is a schematic cross-sectional view of the fabrication process of the photoresist pattern according to the first embodiment of the present invention. First, please refer to Figure 1A , providing a substrate 100. The substrate 100 has a first region 102 and a plurality of second regions 104 , wherein the second regions 104 are located on opposite sides of the first region 102 . In this embodiment, the substrate 100 is, for example, a silicon substrate, and the first region 102 is, for example, an active region on which semiconductor devices can be formed, and the second region 104 is, for example, an isolation region for defining the active region. Specifically, semiconductor elements such as metal oxide semiconductor transistors and memories can be formed on the first region 102, and the second region 104 can be a shallow trench isolation (shallow trench isolation; STI) structure for defining the first region 102. . A plurality of protrusi...

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Abstract

The invention discloses a structural photoresist pattern production process, which includes: providing a substrate. The substrate includes a first region and a plurality of second regions, wherein the second regions are located on opposite sides of the first region, and there are a plurality of second regions. A protrusion pattern is formed on the substrate; a photoresist pattern is formed on the first region, wherein when the protrusion pattern is located at least on the first region and overlaps with the position of the photoresist pattern to be formed, the photoresist pattern is formed on the first region. Before resist patterning, the protrusion pattern is removed.

Description

technical field [0001] The invention relates to a structural semiconductor fabrication process, and in particular to a structural photoresist pattern fabrication process. Background technique [0002] In the photolithography process, the profile and critical dimension (Critical Dimension; CD) of the formed photoresist pattern will be seriously affected by the topography of the substrate and the reflection from the pattern on or in the substrate. The effect of reflectivity. In order to reduce the impact of the topography and reflectivity of the substrate on the profile and critical dimensions of the formed photoresist pattern, it is currently processed by optical proximity correction (Optical Proximity Correct; OPC) before forming the photoresist pattern. Adjust the parameters first. [0003] However, in many cases, the optical proximity correction process is not enough to improve the profile and critical dimension accuracy of the formed photoresist pattern. Therefore, the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/26G03F7/20H01L21/027
CPCG03F7/2022G03F7/2026G03F7/26H01L21/0274
Inventor 史佩珊郭琬琳张宜翔林嘉祺赖俊丞
Owner POWERCHIP SEMICON MFG CORP
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