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Variable-band gap super-junction VDMOS device

A bandgap width and device technology, applied in the field of super-junction VDMOS devices, can solve the problems of increasing the threshold voltage of VDMOS devices, unable to completely prevent the parasitic BJT tube from being turned on, and reducing the resistance of the parasitic BJT base area, so as to improve the reliability of the device. Effect

Active Publication Date: 2017-12-15
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similarly, such a solution still cannot completely eliminate the opening of the parasitic BJT tube, and it cannot completely avoid the device failure problem caused by avalanche breakdown; in addition, it cannot reduce the power VDMOS through high-energy boron implantation or deep diffusion. The resistance of the P-body region under the N+ source region can be used to infinitely reduce the parasitic BJT base region resistance, because this will increase the threshold voltage (channel turn-on voltage) of the VDMOS device

Method used

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  • Variable-band gap super-junction VDMOS device
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  • Variable-band gap super-junction VDMOS device

Examples

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Embodiment 1

[0024]A super junction VDMOS device with variable bandgap width, comprising a metallized drain electrode 1, a first conductivity type semiconductor doped substrate 2, a first conductivity type doped region 3, a second conductivity type semiconductor doped column region 6, Polysilicon gate electrode 10, gate dielectric layer 11, metallized source electrode 12; metallized drain electrode 1 is located on the lower surface of the first conductivity type semiconductor doped substrate 2; the first conductivity type doped region 3 and the second conductivity type semiconductor doped The miscellaneous column region 6 is located on the upper surface of the first conductivity type semiconductor doped substrate 2; the second conductivity type semiconductor doped column region 6 is located on both sides of the first conductivity type doped region 3, and is connected to the first conductivity type doped region 3 Form a super junction structure; the top of the second conductivity type semico...

Embodiment 2

[0033] Such as Figure 4 As shown, the structure of this example is that on the basis of Example 1, the two ends of the metallized source electrode 12 described in Example 1 are extended downwards into the semiconductor body region 7 of the second conductivity type to form a trench structure; The second conductivity type semiconductor doped contact region 9 is located at the bottom of the trench with the metallized source electrode 12 at both ends. The structure can further optimize the avalanche current path and improve the UIS capability of the device.

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Abstract

The invention provides a variable-band gap super-junction VDMOS device, which comprises a metallized leakage electrode, a first conductive-type semiconductor doped substrate, a first conductive-type doping area, second conductive-type semiconductor doped column areas, a polysilicon gate electrode, a gate dielectric layer and a metallized source electrode. Narrow-band gap first conductive-type doping areas by adopting a narrow-band gap semiconductor material are introduced at the side surfaces of the second conductive-type semiconductor doped column areas of a conventional super-junction VDMOS device, a wide-band gap first conductive-type doping area by adopting a wide-band gap semiconductor material is introduced right above the first conductive-type doping area and the narrow-band gap first conductive-type doping areas, and through the above measures, the avalanche breakdown current path when avalanche breakdown happens to the super-junction VDMOS device can be effectively changed, the avalanche breakdown current can be thus away from the base area of a parasitic BJT (Bipolar Junction Transistor), positive bias of the emitter of the parasitic BJT to result in starting of the BJT can be avoided, and the device reliability is thus improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a super junction VDMOS device with variable forbidden band width. Background technique [0002] Power VDMOS plays an important role in power conversion, especially in high-frequency power conversion, because of its advantages such as fast switching speed, low loss, high input impedance, low driving power, and good frequency characteristics. Continuously improving system performance requires power VDMOS with lower power loss and higher reliability under high electrical stress. When there is an unclamped inductive load in the system loop, the energy stored in the inductance in the on state will be released by the VDMOS when it is turned off, and high voltage and high current will be applied to the power VDMOS at the same time, which will easily cause device failure . Therefore, the anti-UIS (Unclamped Inductive Switching, unclamped inductive switching process) f...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/336H01L29/78
CPCH01L29/0634H01L29/66712H01L29/7802
Inventor 李泽宏罗蕾谢驰李佳驹张金平任敏高巍张波
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD