Pressure sensor and preparation method thereof
A technology of pressure sensor and sensing layer, applied in the field of pressure sensor and its preparation, can solve the problems of low detection sensitivity of pressure sensor, achieve the effect of obvious capacitance change and improve detection accuracy
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[0056] According to the above-mentioned core idea, the flow chart of the preparation method of the pressure sensor provided by the present invention is as follows: figure 1 As shown, it specifically includes the following steps:
[0057] Step S11, providing a semiconductor substrate, forming a first groove on the front surface of the semiconductor substrate, forming a second groove in the middle area of the bottom of the first groove, the width of the second groove is smaller than the The width of the first groove, the junction of the second groove and the first groove forms a step;
[0058] Step S12, forming a first sacrificial layer on the semiconductor substrate in the middle region of the second trench;
[0059] Step S13, forming a first sensing layer covering the first sacrificial layer, the first sensing layer having a first array of openings exposing the first sacrificial layer;
[0060] Step S14, forming a second sacrificial layer filling the second trench, and the...
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