Making method of OLED backplane

Abstract

The invention provides a making method of an OLED backplane, which is characterized in that an active layer of a film transistor is made by successively depositing a first oxide semiconductor layer, asecond oxide semiconductor layer, and a third oxide semiconductor layer; a flow ratio of argon and oxide input when the first oxide semiconductor layer and the third oxide semiconductor layer depositis larger than a flow ratio of argon and oxide input when the second oxide semiconductor layer deposits; an oxygen content of the first oxide semiconductor layer and the third oxide semiconductor layer is larger than an oxygen content of the second oxide semiconductor layer; thereby conductivity of the active layer of the film transistor device is increased, the interface defects are reduced, andstability of the film transistor device is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing an OLED backplane. Background technique [0002] Flat-panel display devices have many advantages such as thin body, power saving, and no radiation, and have been widely used. Existing flat panel display devices mainly include liquid crystal display devices (Liquid Crystal Display, LCD) and organic light emitting diode display devices (Organic Light Emitting Display, OLED). [0003] Organic light-emitting diode display devices have excellent characteristics such as self-illumination, no need for backlight, high contrast, thin thickness, wide viewing angle, fast response speed, flexible panels, wide operating temperature range, and simple structure and manufacturing process. It is considered as an emerging application technology for the next generation of flat panel displays. OLED display devices generally include: a substrate, an anode disposed on the...

AI Technical Summary

Problems solved by technology

[0006] In oxide semiconductor thin film transistors, the oxygen content in the active layer (i.e., oxide semiconductor layer) has a great influence on device characteristics. Currently, the active layer in oxide semiconductor thin film transistors generally adopts a single-layer design. The active layer of a single film layer is formed by one-time deposition. If the oxygen flow rate is large during deposition, the oxygen content in the active layer will be too high, the conductivity will be deteriorated, and the mobility of the device will be reduced; and if the oxygen flow rate during deposition If it is smaller, the oxygen content in the active layer will be too low, and the oxygen vacancies will be too many, resulting in the increase of interface defects at the contact interface between the active layer and the buffer layer and the contact interface between the active layer and the gate insulating layer. , the device stability deteriorates

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