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Pulse filtering circuit device

A circuit device and pulse filtering technology, applied in the direction of logic circuit, pulse generation, pulse technology, etc., can solve the problems of small transmission delay, etc., to improve the anti-VS negative bias ability, reduce the delay, improve the anti-dV/ Effect of dt noise capability

Inactive Publication Date: 2018-01-19
MOSWAY TECH LTD
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0010] The present invention aims at the problem that the anti-dV / dt ability, anti-VS negative bias ability and channel transmission delay cannot be taken into account in the prior art of the high-voltage side gate drive circuit, and provides a new type of pulse filter circuit, which adopts the pulse filter The high-voltage side gate drive circuit of the circuit has high anti-dV / dt noise ability and anti-VS negative bias ability, and the channel has a small transmission delay; in addition, the circuit structure is small and compact, saving layout area

Method used

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Embodiment Construction

[0040] In conjunction with the accompanying drawings, the preferred embodiments of the present invention will be described in detail below.

[0041] A novel pulse filter circuit provided by the present invention, such as Figure 4 As shown, there are two signal pathways, namely pathway 1 and pathway 2. Path one includes a first buffer circuit 400 , a first inverter unit 402 and a first shaping circuit 404 , and path two includes a second buffer circuit 401 , a second inverter unit 403 and a second shaping circuit 405 . Wherein, the first inverter unit 402 and the second inverter unit 403 each have four ports, respectively the first port, the second port, the third port and the fourth port, wherein the first port serves as the first inverter The input terminal of the inverter unit 402 (or the second inverter unit 403), the second port is used as the output terminal of the first inverter unit 402 (or the second inverter unit 403), and the third port is used as the first inverte...

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Abstract

The invention provides a pulse filtering circuit device comprising two signal paths, namely a first path and a second path, wherein the first path comprises a first phase inverter unit; the second path comprises a second phase inverter unit, wherein each of the first phase inverter unit and the second phase inverter unit has four ports, which are respectively a first port, a second port, a third port and a fourth port, the first port is used as an input end, the second port is used as an output end, the third port is used as a fixed potential end of the first phase inverter unit or the secondphase inverter unit, and the fourth port is used as a floating potential end of the first phase inverter unit or the second phase inverter unit. The pulse filtering circuit device provided by the invention can eliminate common-mode noise signals, especially dV / dt common-mode noise generated by a power supply, therefore the circuit has very high anti-dv / dt ability and relatively small transmissiondelay, meanwhile due to the simple circuit structure, the chip area is reduced, and the production cost is reduced.

Description

technical field [0001] The invention relates to a circuit device of high-voltage drive technology, in particular to a novel pulse filter circuit device of a high-voltage floating gate drive circuit with high anti-noise capability, and belongs to the technical field of integrated circuits. Background technique [0002] The high voltage side gate drive circuit 101 in the prior art, such as figure 1 As shown, it is an integrated circuit device that controls the turn-on and turn-off of high-voltage power switching devices with low-voltage signals. Because it can effectively control bridge-connected power switching devices, it is widely used in fields such as motor drives and resonant power supplies. [0003] The high-side gate drive circuit 101 is often used to drive the high-side switching devices in the half-bridge structure, while the low-side switching devices in the half-bridge structure are driven by the low-side gate drive circuit 102, and its basic topology is as follows...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K5/15
CPCH03K5/1252H03K5/1534H03K5/2472H03K17/687H03K19/0948H03H11/04H03K3/356H03K19/20
Inventor 陈安邦祝靖张允武
Owner MOSWAY TECH LTD
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