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Power transistor driver

A technology of power transistors and driving devices, which is applied in the direction of transistors, output power conversion devices, semiconductor devices, etc., and can solve the problem of shortening the conduction time of FETs

Active Publication Date: 2021-01-05
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the timing of turning on the FET has to be delayed according to the margin, and as a result, the on-time of the FET becomes shorter

Method used

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Experimental program
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Effect test

no. 1 Embodiment approach

[0021] First, refer to Figure 1 ~ Figure 3 , the power transistor drive device 1 according to the first embodiment will be described. In this embodiment, if figure 1 As shown, the power transistor includes an insulated gate bipolar transistor (hereinafter referred to as IGBT) 20 and a field effect transistor (hereinafter referred to as FET) 30 connected in parallel to the IGBT 20 . That is, the emitter of IGBT20 and the source of FET30 are connected, and the collector of IGBT20 and the drain of FET30 are respectively connected. In addition, as FET30, MOSFET, JFET, HEMT etc. can be used, for example.

[0022] An IGBT gate drive circuit 11 is connected to the gate of the IGBT 20 , and the IGBT gate drive circuit 11 generates a voltage applied to the gate of the IGBT 20 in order to turn the IGBT 20 on or off in accordance with a drive signal supplied from the outside.

[0023] In addition, a FET gate drive circuit 13 is connected to the gate of the FET30, and the FET gate dr...

no. 2 Embodiment approach

[0045] Next, the power transistor drive device 1 according to the second embodiment will be described.

[0046] In the power transistor drive device 1 according to the first embodiment, the IGBT gate voltage monitoring circuit 12 detects that the IGBT 20 is turned on based on the gate voltage applied to the gate of the IGBT 20 .

[0047] Here, the on-threshold voltage and on-resistance of IGBT 20 vary somewhat depending on the ambient temperature. Therefore, in order to more accurately detect that IGBT20 is turned on based on the gate voltage of IGBT20, a temperature detection element (for example, a temperature-sensitive diode) for detecting the temperature of IGBT20 may be provided. Furthermore, the IGBT gate voltage monitoring circuit 12 may vary the FET conduction determination threshold voltage Vth in consideration of the temperature characteristics of the conduction threshold voltage and the conduction resistance of the IGBT 20 based on the temperature detected by the te...

no. 3 Embodiment approach

[0049] Next, the power transistor drive device 1 according to the third embodiment will be described. Figure 4 The structure of the power transistor drive device 1 of this embodiment is shown.

[0050] The configuration of the power transistor driving device 1 of the present embodiment overlaps with the configuration of the power transistor driving device 1 of the first embodiment in many parts. Therefore, the following description will focus on the different configurations, and omit the description of the redundant configurations.

[0051] First, as a first difference, in the present embodiment, the IGBT 20 has a structure in which a plurality of cells are connected in parallel, and the cells are divided into a large number of main cells 21 and a small number of sense (sense) cells 22 . The ratio of the main unit 21 to the readout unit 22 is set in advance. Therefore, when the IGBT 20 is turned on, most of the current flowing between the emitter and the collector of the IG...

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Abstract

A power transistor drive device comprising: a field effect transistor (30); an insulated gate bipolar transistor (20) connected in parallel to the field effect transistor; a first drive circuit (11) configured to drive the above insulated gate bipolar The pole transistor is turned on to generate the first gate voltage applied to the gate of the above-mentioned insulated gate bipolar transistor; the second drive circuit (13) adjusts the second gate voltage applied to the gate of the above-mentioned field effect transistor , turning on or off the field effect transistor; the detecting circuit (12, 15), detecting whether the above insulated gate bipolar transistor is turned on when the first driving circuit generates the first gate voltage. The second drive circuit generates the second gate voltage for turning on the field effect transistor on the condition that the detection circuit detects that the insulated gate bipolar transistor is turned on.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2015-104623 filed on May 22, 2015, and the content of the description is incorporated herein. technical field [0002] The present invention relates to a power transistor driving device that drives an insulated gate bipolar transistor and a field effect transistor connected in parallel. Background technique [0003] For example, Patent Document 1 shows a structure in which an insulated gate bipolar transistor (hereinafter referred to as IGBT) and a field effect transistor (hereinafter referred to as FET) are connected in parallel. In the invention of Patent Document 1, in order to reduce the size of the FET and further reduce the size of the entire device, the entire current flows to the IGBT side in a transient state during switching. Specifically, when turning on (turn on), the IGBT is first turned on and then the FET is turned on. In addition, when turning off (turn off), the IGBT is turned ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567H02M1/08H03K17/08
CPCH03K17/0822H03K17/0828H03K17/127H01L2224/05554H01L2224/48137H01L2224/48247H01L2224/49171H01L2224/49175H03K17/567H02M1/08H03K17/08H01L23/34H01L27/0623H02M1/32H03K17/18
Inventor 长濑拓生
Owner DENSO CORP