Power semiconductor chip and formation method thereof

Abstract

The invention relates to a power semiconductor chip and a formation method thereof. The power semiconductor chip comprises an annular junction terminal region and a cell region, wherein the annular junction terminal region is arranged at an edge of the power semiconductor chip, the cell region is encircled by the annular junction terminal region, a cell array is formed in the cell region, a cell is a power transistor, the cell region comprises more than two sub-regions, one of the sub-regions is a cell sub-region and is arranged in the center of the cell region, the other sub-regions are in annular shapes and are sequentially arranged around the central sub-region, the length of the cell channel in the same sub-region is same, and the length of the cell channel in the central sub-region issmaller than the length of the cell channel in the other sub-regions. The power semiconductor chip is uniform in heat distribution and high in reliability during the working process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power semiconductor chip and a forming method thereof. Background technique [0002] Power semiconductor devices can be divided into uncontrollable devices, half-controlled devices and fully-controlled devices. Among them, uncontrollable devices include various diodes, half-controlled devices include silicon-controlled rectifiers (SCRs), etc., fully-controlled devices include power metal oxide field effect transistors, insulated gate bipolar transistors (IGBTs), bipolar junction type transistor (BJT), etc. [0003] The fully-controlled power device generally works in the switch state, and is in the ohmic region after being turned on, and its voltage drop or on-resistance is extremely low; while it is in the cut-off region after being turned off, with very little leakage, so when used as a switch, the power The loss generated on the device is very small, and the device ...

AI Technical Summary

Problems solved by technology

[0004] However, in some application fields, such as solid-state relays, electronic loads and other devices, it is necessary for power discrete devices to work in the saturation region and maintain their characteristics for a period of time. At this time, a very large loss will occur on the device

The reliability of conventional power devices is drastically reduced at this time

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