Power semiconductor chip and formation method thereof

Abstract

A power semiconductor chip and a method for forming the same, wherein the power semiconductor chip includes: an annular junction terminal region located at the edge of the power semiconductor chip; a cell region surrounded by the junction termination region, and a cell region is formed in the cell region A cell array, the cells are power transistors; the cell area includes more than two sub-areas, one of which is a central sub-area located at the center of the cell area, and the other sub-areas are ring-shaped and surround all of them in turn The central sub-region is set; the length of the cell channel in the same sub-region is the same, and the length of the cell channel in the central sub-region is smaller than the length of the cell channel in other sub-regions. During the working process of the above-mentioned power semiconductor chip, the heat distribution is uniform, and the reliability is higher.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power semiconductor chip and a forming method thereof. Background technique [0002] Power semiconductor devices can be divided into uncontrollable devices, half-controlled devices and fully-controlled devices. Among them, uncontrollable devices include various diodes, half-controlled devices include silicon-controlled rectifiers (SCRs), etc., fully-controlled devices include power metal oxide field effect transistors, insulated gate bipolar transistors (IGBTs), bipolar junction type transistor (BJT), etc. [0003] The fully-controlled power device generally works in the switch state, and is in the ohmic region after being turned on, and its voltage drop or on-resistance is extremely low; while it is in the cut-off region after being turned off, with very little leakage, so when used as a switch, the power The loss generated on the device is very small, and the device ...

AI Technical Summary

Problems solved by technology

[0004] However, in some application fields, such as solid-state relays, electronic loads and other devices, it is necessary for power discrete devices to work in the saturation region and maintain their characteristics for a period of time. At this time, a very large loss will occur on the device

The reliability of conventional power devices is drastically reduced at this time

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