Method for preparing samples for scanning capacitance microscopy and samples prepared using this method
A microscope and sample technology, applied in the preparation of test samples, scanning probe microscopy, scanning probe technology, etc., can solve problems such as uneven force, damage to the scanning area, and inability to obtain address capacitance information, etc., to increase The effect of overall thickness
Active Publication Date: 2020-05-12
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
However, due to the uneven force during grinding, the actual prepared SCM cross-section samples are as follows: Figure 1c , it can be seen that the surface after grinding is curved, when the target address area 101 is relatively close to the sample surface (such as Figure 1c situation), the traditional sample preparation method will destroy the scanning area, so that the capacitance information of the address cannot be obtained. At present, there is no better way to prepare a cross-sectional SCM sample with the scanning area close to the sample surface
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[0021] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.
[0022] Unless expressly stated otherwise, throughout the specification and claims, the term "comprise" or variations thereof such as "includes" or "includes" and the like will be understood to include the stated elements or constituents, and not Other elements or other components are not excluded.
[0023] Illustrate principle of the present invention below in conjunction with accompanying drawing, as Figure 2a-2d as well as Figures 3a-3d shown. The method of the present invention includes: providing a target address region 101, which is any structure to be observed using a scanning capacitance microscope, and the target address region 101 is buried in the first oxide 102, and between the first oxide 102 There is ...
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The invention provides a preparation method for a sample for a scanning capacitance microscope. The method is characterized by comprising the following steps: supplying a target address area, whereinthe target address area is arranged as any structure which is scanned by a scanning capacitance microscope, the target address area is embedded in a first oxide and a silicon slice is arranged under the first oxide; depositing the second oxide on the first oxide; adhering one layer or multiple layers of glass sheets to the second oxide, thereby acquiring a to-be-milled sample; milling the to-be-milled sample, thereby acquiring the sample for the scanning capacitance microscope. According to the invention, the oxide layer is deposited on a present to-be-milled SCM section sample and the glass sheet layer is adhered, so that the overall thickness of the to-be-milled SCM section sample is increased and the target address area is not damaged by the curved section phenomenon caused by uneven force application in the milling process.
Description
technical field [0001] The invention relates to a method for preparing a sample and a sample prepared by the method, in particular to a method for preparing a sample for a scanning capacitance microscope and a sample prepared by the method. Background technique [0002] Since the invention of the atomic force microscope (SAFM), it has been widely used in the scientific fields of physics, chemistry, biology and materials, and the derived scanning capacitance microscope (SCM) has also become a very important method for the development, manufacture and inspection of semiconductor devices. And a necessary means, especially for the inspection of the ion implantation process of semiconductor devices, the scanning capacitance microscope is an indispensable inspection means. [0003] The currently widely used SCM is to apply a low-frequency AC electric field between the conductive AFM tip and the semiconductor sample under the AFM contact mode. The free carriers in the sample are pe...
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IPC IPC(8): G01N1/28G01N1/32G01Q60/46
CPCG01N1/28G01N1/286G01N1/32G01N2001/2866G01Q60/46
Inventor 魏磊高慧敏方斌
Owner YANGTZE MEMORY TECH CO LTD