Polycrystalline silicon production raw material and polycrystalline silicon production method
A production method and polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve problems such as inconvenience in exhaust gas treatment, reduce heat demand, increase deposition speed, and save electricity.
Inactive Publication Date: 2018-02-23
CHENGDU SHULING TECH DEV
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Problems solved by technology
[0005] However, there are still some problems in the existing production process, such as the inconvenience of tail gas treatment, etc.
Method used
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[0032] Embodiments of the present invention will be described in detail below in conjunction with examples, but those skilled in the art will understand that the following examples are only for illustrating the present invention, and should not be considered as limiting the scope of the present invention. Those who do not indicate the specific conditions in the examples are carried out according to the conventional conditions or the conditions suggested by the manufacturer. The reagents or instruments used were not indicated by the manufacturer, and they were all conventional products that could be purchased from the market.
[0033] The raw materials for polysilicon production and the polysilicon production method of the embodiments of the present invention are described in detail below:
[0034] In the prior art, polysilicon is generally prepared by a modified Siemens method. That is, polysilicon is mainly prepared by reducing trichlorosilane with hydrogen. However, in the...
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The invention discloses a polycrystalline silicon production raw material and a polycrystalline silicon production method and belongs to the field of polycrystalline silicon. According to the polycrystalline silicon production method, polycrystalline silicon is prepared from a reduced tail gas as a raw material, and the reduced tail gas is generated from a production process that polycrystalline silicon is prepared from trichlorosilane and hydrogen through reduction. The polycrystalline silicon production method comprises the following steps: recycling a chlorosilane material with trichlorosilane, silicon tetrachloride and dichlorosilane from the reduced tail gas; adjusting the mole ratio of the trichlorosilane to the silicon tetrachloride and the dichlorosilane in the chlorosilane material to 1:(0.03-0.2):(0.05-0.3) so as to obtain a mixed material; enabling hydrogen to contact with the mixed material, and performing a reduction reaction. By adopting the polycrystalline silicon production method disclosed by the invention, dichlorosilane and silicon tetrachloride generated in conventional production process are sufficiently utilized, the deposition speeds and the product quality of polycrystalline silicon in a reaction furnace are improved, meanwhile the cost for treating wastes, namely the dichlorosilane and the silicon tetrachloride, is effectively reduced for companies, consumption of silicon is reduced, and the utilization rate is increased.
Description
technical field [0001] The invention relates to the field of polysilicon, in particular to a polysilicon production raw material and a polysilicon production method. Background technique [0002] With the development of the world economy, the demand for energy is constantly increasing, and the traditional fossil energy is almost exhausted. Finding a low-carbon, clean and renewable new energy has become the main topic of the current world economic development. Solar photovoltaic energy has many advantages such as renewable, clean, and low-carbon. In the future development of world energy, photovoltaic solar energy will definitely become the first choice for energy sources in all countries in the world. Therefore, countries all over the world are currently vigorously developing the photovoltaic solar industry to reduce Dependence on traditional fossil fuels. [0003] Solar grade polysilicon is the most basic material for the solar photovoltaic power generation industry. Now ...
Claims
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IPC IPC(8): C01B33/035
CPCC01B33/035
Inventor 王姗
Owner CHENGDU SHULING TECH DEV