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Method for one-step preparing of molybdenum disulfide film with ultra-lubricating function through atomic layer deposition and product and application of molybdenum disulfide film

A technology of atomic layer deposition and molybdenum disulfide, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve problems such as complicated steps, shorten time and simplify the overall preparation process

Active Publication Date: 2018-02-27
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention aims at preparing MoS by atomic layer deposition method 2 For the problem of complex steps, the purpose of the present invention is to provide a method for preparing a molybdenum disulfide film with superlubricity in one step by atomic layer deposition

Method used

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  • Method for one-step preparing of molybdenum disulfide film with ultra-lubricating function through atomic layer deposition and product and application of molybdenum disulfide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Put the Si which has been strictly cleaned on the surface as the substrate, put it into the ALD deposition chamber, heat it to 400°C, set the Mo(CO) 6 The heating temperature of (molybdenum hexacarbonyl) solid source is 35 ℃, the pulse time is 2 seconds, the flushing time is 5 seconds, and the carrier gas flow rate is 200 sccm; SH(CH 2 ) 2 The pulse time of the SH (ethanedithiol) source is 0.5 seconds, the flushing time is 5 seconds, and the carrier gas flow rate is 200 sccm; according to Mo(CO) 6 (Molybdenum hexacarbonyl) pulse / high-purity nitrogen purge / Mo(CO) 6 (Molybdenum hexacarbonyl) pulse / high purity nitrogen purge / SH(CH 2 ) 2 SH (ethanedithiol) pulse / high-purity nitrogen purge = (2s / 5s / 2s / 5s / 0.5s / 5s) is a cycle unit, and the number of deposition cycles is 100: MoS with excellent lubricating effect can be obtained 2 film.

Embodiment 2

[0029] Put the Si which has been strictly cleaned on the surface as the substrate, put it into the ALD deposition chamber, heat it to 350°C, set the Mo(CO) 6 (molybdenum hexacarbonyl) solid source heating temperature to 30 ℃, pulse time is 1.5 seconds, flushing time is 3 seconds, carrier gas flow is 150sccm; SH (CH 2 ) 2 The pulse time of the SH (ethanedithiol) source is 0.5 seconds, the flushing time is 5 seconds, and the carrier gas flow rate is 200 sccm; according to Mo(CO) 6 (Molybdenum hexacarbonyl) pulse / high-purity nitrogen purge / Mo(CO) 6 (Molybdenum hexacarbonyl) pulse / high purity nitrogen purge / SH(CH 2 ) 2SH (ethanedithiol) pulse / high-purity nitrogen purge = (1.5s / 3s / 1.5s / 3s / 0.5s / 5s) is a cycle unit, and the number of deposition cycles is 100; excellent lubricating effect can be obtained MoS 2 film.

Embodiment 3

[0031] Put the Si which has been strictly cleaned on the surface as the substrate, put it into the ALD deposition chamber, heat it to 450°C, set the Mo(CO) 6 (molybdenum hexacarbonyl) solid source heating temperature to 40 ℃, pulse time is 1.5 seconds, flushing time is 4 seconds, carrier gas flow is 200sccm; SH (CH 2 ) 2 The pulse time of the SH (ethanedithiol) source is 0.5 seconds, the flushing time is 5 seconds, and the carrier gas flow rate is 200 sccm; according to Mo(CO) 6 (Molybdenum hexacarbonyl) pulse / high-purity nitrogen purge / Mo(CO) 6 (Molybdenum hexacarbonyl) pulse / high purity nitrogen purge / SH(CH 2 ) 2 SH (ethanedithiol) pulse / high-purity nitrogen purge = (1.5s / 4s / 1.5s / 4s / 0.5s / 5s) is a cycle unit, and the number of deposition cycles is 100: excellent lubricating effect can be obtained MoS 2 film.

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Abstract

The invention relates to a method for one-step preparing of a MoS2 film with an ultra-lubricating function through atomic layer deposition and a product and application of the MoS2 film. A Si substrate is cleaned in the following manner that after the Si substrate is wiped by ethyl alcohol and acetone, the Si substrate is subjected to ultrasonic oscillating for 5-10 min sequentially in acetone anddeionized water, then, the Si substrate is repeatedly washed through deionized water and is blown dry through a nitrogen gun, the Si substrate is placed in an atomic layer deposition system reactionchamber, a Mo(CO)6(molybdenum hexacarbonyl) solid source and SH(CH2)2SH(dithioglycol) liquid source are adopted, and atomic layer deposition is adopted for one-step preparing of the MoS2 film with theexcellent lubrication effect. The additional high-temperature vulcanization process is not needed in the related preparing method, the integral preparing process is effectively simplified, the MoS2 film with the extremely low friction coefficient is obtained under the condition that the plasma technology and other auxiliary technologies are not used, large-scale batched production is easy to achieve, and important application potentials are achieved.

Description

technical field [0001] The invention relates to a solid lubricating film, in particular to one-step preparation of solid MoS with obvious lubricating effect by atomic layer deposition technology 2 Thin film methods and their products and applications. Background technique [0002] Transition metal sulfides have a layered structure similar to graphite and are classified as a new class of two-dimensional materials. Among them, bulk MoS 2 Unlike graphene's indirect energy gap of 1.3eV, few-layer bulk MoS 2 The film has a direct bandgap of 1.8eV, 50-200cm at room temperature 2 / Vs Excellent mobility; it has good optical, electrical, mechanical and mechanical properties at the same time, and has received extensive attention in the fields of semiconductor active layer thin films of transistors, catalysts for hydrogen evolution reactions, electrode materials for lithium-ion batteries, and solid lubrication. [0003] in MoS 2 In the technical research of thin film preparation a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/455
Inventor 何丹农卢静涂兴龙沈蔚洪周琴金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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