Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A waveguide light intensity modulation device with extremely low half-wave voltage

A technology of half-wave voltage and light intensity, applied in optics, nonlinear optics, instruments, etc., to achieve the effects of easy formation, small size, and convenient integration of optoelectronics

Active Publication Date: 2021-02-09
XIAN INSTITUE OF SPACE RADIO TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Up to now, using the electro-optic birefringence effect of PLZT transparent ceramics, only thin-film waveguide structures have been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A waveguide light intensity modulation device with extremely low half-wave voltage
  • A waveguide light intensity modulation device with extremely low half-wave voltage
  • A waveguide light intensity modulation device with extremely low half-wave voltage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention will be further described below with reference to the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited by this.

[0022] like figure 1 shown, figure 1 It is a schematic diagram of the structure of the ultra-low voltage modulator of the present invention. It can be seen from the figure that an ultra-low half-wave voltage waveguide optical intensity modulation device includes a first transmission optical waveguide 1, a second transmission optical waveguide 2, and a third transmission optical waveguide. 3. The fourth transmission optical waveguide 4, the fifth transmission optical waveguide 5, the sixth transmission optical waveguide 6, the modulation optical waveguide 7, the eighth transmission optical waveguide 8, the microelectrode 9, the microelectrode 10 and the external power supply 11 are electro-optically transparent Ceramic (PLZT / PMNT) is used as the substrate, and the optical wav...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A waveguide optical intensity modulation device with extremely low half-wave voltage, including a substrate, an optical waveguide, a microelectrode, and an external driving power supply (11); the electro-optic transparent ceramic is used as the substrate, and the electro-optic transparent ceramic substrate is processed by femtosecond laser micromachining. The optical waveguide is induced on the top and the microelectrodes are fabricated to be integrated into a Mach-Zehnder electro-optic modulator, and the microelectrodes are respectively connected to an external driving power supply (11). The invention has the characteristics of low half-wave voltage, fast response speed and high extinction ratio, and can be applied to the fields of laser optoelectronic devices, optical communication and the like.

Description

technical field [0001] The present invention relates to a waveguide light intensity modulation device. Background technique [0002] Transparent PLZT / PMNT opto-ceramics have a wide transmission band (0.4-7 μm), a large secondary electro-optic coefficient (than LiNbO under equivalent conditions) 3 high laser damage threshold (>500MW / cm) 2 ), fast response speed (tens of nanoseconds) and many other advantages, make transparent PLZT / PMNT opto-ceramics have a lot of research in the field of new high-power electro-optic switches, and have achieved certain research results in the innovation of devices. Combined with the rapid development of femtosecond laser pulses in the current society and the unique advantages of micro-machining in the material body, ceramics have the advantages of reducing the size or laser-induced modification to improve the loss of the device and improve the response speed of the material. It is of great significance. In addition, ceramics are isotropic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/055G02F1/035
CPCG02F1/035G02F1/0551G02F1/0553
Inventor 张学娇徐常志杨新权兰枫
Owner XIAN INSTITUE OF SPACE RADIO TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com