Method for in-situ measurement of material thermoelectric properties in diamond anvil cell

A diamond-to-anvil, in-situ measurement technology, applied in the direction of material thermal development, single semiconductor device testing, semiconductor characterization, etc.

Inactive Publication Date: 2018-03-06
INST OF GEOCHEM CHINESE ACADEMY OF SCI
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Problems solved by technology

However, in the existing experimental technology, there is no mature measurement method for measuring the thermoelectric properties of samples in

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  • Method for in-situ measurement of material thermoelectric properties in diamond anvil cell
  • Method for in-situ measurement of material thermoelectric properties in diamond anvil cell
  • Method for in-situ measurement of material thermoelectric properties in diamond anvil cell

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Embodiment Construction

[0044] A method for in situ measuring the thermoelectric properties of materials in a diamond pair anvil is provided, comprising:

[0045] Step 1, making of thermal insulation composite gasket;

[0046] Step 2, carry out the deposition of W-Ta thin film thermocouple on diamond anvil surface;

[0047] Step 3, measuring the Seebeck coefficient of the sample under high pressure;

[0048] Step 4. Conductivity measurement of the sample under high pressure.

[0049] In the thermal and electrical measurement process of high-voltage diamond anvil, the heat insulation and insulation of the sample are problems that cannot be ignored. Traditional diamond anvils use metal gaskets such as T301 steel, rhenium sheets, and tungsten sheets. The insulation between the gasket, the sample and the metal electrodes, and the heat insulation on both sides of the sample have always been difficult points in high-voltage electrical measurements.

[0050] Therefore the present invention adopts following...

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Abstract

The present invention discloses a method for in-situ measurement of material thermoelectric properties in a diamond anvil cell (DAC). The method comprises the steps of: the step 1, manufacturing of heat-isolating and insulated composite pad; the step 2, deposition of a W-Ta thin film thermocouple on a surface of the DAC; the step 3, performing Seebeck coefficient measurement of a measured sample in a high voltage; and the step 4, performing conductivity measurement of the sample in the high voltage. Though the DAC is employed in the prior art to allow people to observe structures of substancesand change of physical properties in an ultrahigh voltage environment, lots of semiconductor materials can generate reduction of energy bands and increasing of a conductivity in a high voltage, and therefore, a superexcellent experiment means is provided for improving the thermoelectric properties of the semiconductor materials. In the prior art, there is no a set of developed measurement methodfor measurement of thermoelectric properties of samples in the DAC, so that the technical problems cannot be solved that the thermoelectric properties of the materials cannot be simply and conveniently tested in the prior art.

Description

Technical field: [0001] The invention belongs to the technical field of in-situ measurement of physical quantities under high-pressure conditions, and in particular relates to a method for in-situ measurement of thermoelectric properties of materials in a diamond counter-anvil. Background technique: [0002] With the increasing depletion of fossil energy, energy issues have become the focus of attention of countries all over the world. Scientists from all over the world are working on finding efficient and pollution-free new energy conversion and utilization methods. Therefore, since the 1990s, the research on energy conversion materials (thermoelectric materials) has become a research hotspot in material science. Thermoelectric materials, also known as thermoelectric materials, are a new type of functional materials with mutual conversion between thermal effect and electric effect. Using the property of thermoelectric materials, thermal energy and electrical energy can be ...

Claims

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Application Information

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IPC IPC(8): G01R31/26G01N25/20
CPCG01R31/2648G01N25/20
Inventor 吴雷代立东
Owner INST OF GEOCHEM CHINESE ACADEMY OF SCI
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