Semiconductor device and manufacturing method thereof

A semiconductor and transmission region technology, applied in semiconductor devices, radiation control devices, electric solid devices, etc., can solve the problem of reducing the full well electron capacity of image sensors, and achieve the effects of improving image quality, increasing quantum efficiency, and suppressing dark current

Active Publication Date: 2020-09-25
淮安西德工业设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to prevent the occurrence of dark current, ion implantation is used on each surface of silicon to form surface radiation, thereby preventing electrons from forming dark current across the silicon surface, but this method will reduce the full well capacity of the image sensor (Full WellCapacity)

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

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Embodiment Construction

[0045]Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise. In addition, techniques, methods, and devices known to persons of ordinary skill in the related art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the authorized specification.

[0046] In the specification and claims, the words "front", "rear", "top", "bottom", "above", "under", etc., if present, are used for descriptive purposes and not necessarily to describe a constant relative position. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the disclosure d...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a buffer layer, and a radiation adjustment layer. The substrate includes trenches and transmission regions separated by the trenches. The buffer layer is formed on the substrate, and covers the surfaces of the trenches and the transmission regions. The radiation adjustment layer is formed on the buffer layer, and includes a first portion on the buffer layer in the trenches and a second portion on the buffer layer on the transmission regions, wherein the first portion is formed from a radiation reflection material or a radiation absorption material, and the second portion is formed from a radiation transmission material.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to semiconductor devices and methods of manufacturing the same. Background technique [0002] Image sensors may be used to sense radiation (eg, optical radiation, including but not limited to visible light, infrared, ultraviolet, etc.) to generate corresponding electrical signals (images). It is widely used in digital cameras, security devices, and other imaging equipment. Image sensors can be classified into back-illuminated (BSI) image sensors and front-illuminated (FSI) image sensors according to the way they receive radiation. [0003] A backside illuminated (BSI) image sensor is capable of receiving radiation from its backside. Different from front-illuminated (FSI) image sensors, in back-illuminated (BSI) image sensors, radiation is incident from the back of the substrate, while wiring and other components that may affect radiation reception are basically located ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14623H01L27/1463H01L27/1464H01L27/14685
Inventor 陈世杰黄晓橹
Owner 淮安西德工业设计有限公司
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