Semiconductor device and manufacturing method thereof

A semiconductor and transmission region technology, applied in semiconductor devices, radiation control devices, electric solid devices, etc., can solve the problem of reducing the full well electron capacity of image sensors, and achieve the effects of improving image quality, increasing quantum efficiency, and suppressing dark current
CN107768392BActive Publication Date: 2020-09-25淮安西德工业设计有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
淮安西德工业设计有限公司
Publication Date
2020-09-25

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a buffer layer, and a radiation adjustment layer. The substrate includes trenches and transmission regions separated by the trenches. The buffer layer is formed on the substrate, and covers the surfaces of the trenches and the transmission regions. The radiation adjustment layer is formed on the buffer layer, and includes a first portion on the buffer layer in the trenches and a second portion on the buffer layer on the transmission regions, wherein the first portion is formed from a radiation reflection material or a radiation absorption material, and the second portion is formed from a radiation transmission material.
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Description

technical field

[0001] The present disclosure relates to the field of semiconductors, and in particular, to semiconductor devices and methods of manufacturing the same. Background technique

[0002] Image sensors may be used to sense radiation (eg, optical radiation, including but not limited to visible light, infrared, ultraviolet, etc.) to generate corresponding electrical signals (images). It is widely used in digital cameras, security devices, and other imaging equipment. Image sensors can be classified into back-illuminated (BSI) image sensors and front-illuminated (FSI) image sensors according to the way they receive radiation.

[0003] A backside illuminated (BSI) image sensor is capable of receiving radiation from its backside. Different from front-illuminated (FSI) image sensors, in back-illuminated (BSI) image sensors, radiation is incident from the back of the substrate, while wiring and other components that may affect radiation reception are basically located ...

Claims

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