Simulation detection method for filling stability of groove or hole by physical vapor deposition machine
A physical vapor deposition and detection method technology, applied in the field of semiconductor manufacturing process, can solve the problems of many variables and the inability to accurately characterize the influence of bias voltage, etc.
Active Publication Date: 2019-09-06
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0006] At present, the parameters of the card control PVD machine and process stability include the simulation of the sheet resistance and thickness of the copper film, but because the film deposition thickness and sheet resistance are affected by many factors, there are too many variables, and it is impossible to accurately characterize the influence of the bias voltage; therefore The current detection simulation method does not have any card control in terms of the impact on the bias voltage of the machine
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[0025] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0026] In the PVD machine, under the action of bias voltage, copper ions will continuously deposit on the surface of the substrate. At the same time, copper ions will bombard the film on the surface of the substrate and sputter the atoms attached to the surface of the substrate to different directions. This phenomenon is called the self-ionization property of copper. The present invention uses the self-ionization characteristics of...
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Abstract
The invention relates to a simulation detection method for groove or hole filling stability of a PVD (physical vapor deposition) machine station. The method comprises steps as follows: respective substrate deposition thickness or square resistance of m detection points under bias pressure being P1-Pn when the PVD machine station is under the fixed deposition condition and respective reduction ratios of the m detection points under bias pressure being P1-Pn are obtained at set intervals, n is a natural number larger than 1, and m is a natural number; multiple obtained substrate deposition thickness values of the same detection point under the same deposition condition and bias pressure are compared, the multiple obtained reduction ratios of the same detection point under the same depositioncondition and bias pressure are compared, and stability of the machine station affected by the bias pressure is judged according to comparison results. According to the simulation detection method, anew simulation means is added for test of filling capacity of the PVD machine station, and the current situations of single simulation means and more influencing variables are changed.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a method for simulating and detecting the filling stability of grooves or holes by a physical vapor deposition machine. Background technique [0002] With the continuous development of semiconductor technology, the current memory manufacturing technology has gradually transitioned from a simple planar structure to a more complex three-dimensional structure. The technology research and development of three-dimensional memory is one of the mainstreams of international research and development. [0003] In the three-dimensional memory, the metal layer deposition structure for wiring is usually realized by chemical vapor deposition (CVD), physical vapor deposition (PVD) process and electroless plating (ECP) process. Among them, the physical vapor deposition process is to use physical methods to vaporize the surface of the material source into gaseous atoms, molec...
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IPC IPC(8): G01M99/00G01N27/00G01N27/04C23C14/54
Inventor 马亮潘杰吕术亮章星李远万先进
Owner YANGTZE MEMORY TECH CO LTD