Silicon hollow beam, silicon microaccelerometer based on silicon hollow beam, and preparation method thereof
An accelerometer, hollow technology, applied in the direction of measuring acceleration, velocity/acceleration/shock measurement, measuring devices, etc., can solve the temperature characteristics and robustness limitations, large bending modal interference of support beams, and poor anti-modal interference ability and other problems, to achieve the effect of improving anti-interference ability, low cost and high processing quality
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[0067] like Figure 8 and Figure 9As shown, the basic steps of the preparation method of the silicon micro-accelerometer based on the silicon hollow beam in this embodiment include: using dry etching to process the prepared silicon substrate, bonding the silicon substrate and a piece of SOI silicon wafer by low stress bonding, The micro-accelerometer is obtained by preparing a silicon-sensitive structure by dry etching, and its specific implementation steps include:
[0068] a) Prepare the first SOI wafer as a silicon substrate such as Figure 8 Shown in (a); In the present embodiment, the thickness of the device layer of the SOI silicon wafer is 6 microns;
[0069] b) The device layer of the silicon base is dry etched for the first time to form a gap between the silicon substrate 1 and the silicon sensitive structure 2; in this embodiment, the first dry etching of the silicon base is 2 microns, and the formed gap is as follows Figure 8 as shown in (b);
[0070] c) On th...
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