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Terahertz quantum cascade laser device

A quantum cascade laser, terahertz technology, used in lasers, phonon exciters, semiconductor lasers, etc., can solve problems such as complex composition

Active Publication Date: 2020-07-31
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its composition is more complex

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  • Terahertz quantum cascade laser device
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  • Terahertz quantum cascade laser device

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Embodiment Construction

[0017] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0018] figure 1 (a) is a schematic top view of the terahertz quantum cascade laser device of the first embodiment, figure 1 (b) is a schematic sectional view along line A-A, figure 1 (c) is a schematic sectional view along line B-B.

[0019] The terahertz quantum cascade laser device has a substrate 10 , a semiconductor laminate 20 , and a first electrode 30 .

[0020] The substrate 10 is formed of InP, InGaAs, GaAs or the like having optical nonlinearity.

[0021] The semiconductor laminate 20 has an active layer 12 and a first cladding layer 14 . The active layer 12 is disposed on the substrate 10 and is capable of emitting a first infrared laser G1 and a second infrared laser G2 through an optical transition between sub-bands. The first cladding layer 14 has a first distributed feedback region 14 a and a second distributed feedback region 14 b separately arrange...

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Abstract

The present invention provides a quantum cascade laser device capable of emitting terahertz waves as the difference frequency of two infrared rays. The terahertz quantum cascade laser device has a substrate, a semiconductor laminate, and a first electrode. The semiconductor laminate has an active layer provided on a substrate capable of emitting infrared laser light through an optical transition between subbands, and a first cladding layer provided on the active layer, and is provided with a ridge waveguide. A first distributed feedback region and a second distributed feedback region are provided on the upper surface of the first cladding layer and are provided separately along the extending direction of the ridge waveguide. The first electrode is provided on the upper surface of the first cladding layer. The planar size of the first distributed feedback region is smaller than the planar size of the second distributed feedback region.

Description

technical field [0001] Embodiments of the present invention relate to a terahertz quantum cascade laser device (Japanese: テラヘルツquantum kasked laser device). Background technique [0002] When a terahertz wave having a frequency of 30 GHz to 30 THz is used, for example, a specific substance or the like in a paper bag can be detected. [0003] However, it is difficult to generate terahertz waves with high-frequency circuits. [0004] When a nonlinear crystal is irradiated with a two-wavelength infrared laser light generated from a KTP (KTi0P4)-OPO (Optical Parametric Oscillator: Optical Parametric Oscillator), a terahertz wave is generated as a difference frequency. However, its composition is complicated. [0005] Patent Document 1: Japanese Patent Laid-Open No. 2008-53519 Contents of the invention [0006] The present invention provides a quantum cascade laser device capable of emitting terahertz waves as a difference frequency of two infrared rays. [0007] A terahert...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12
CPCH01S5/12H01S5/028H01S5/0612H01S5/06258H01S5/1096H01S5/1203H01S5/02415H01S5/22H01S5/0206H01S5/0604H01S5/3402H01S5/34313
Inventor 角野努斋藤真司山根统
Owner KK TOSHIBA