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ITO conducting film

A conductive film and conductive film technology, applied in the optical field, can solve the problems of poor transmittance, poor chemical stability, low refractive index, etc., and achieve the effect of eliminating obvious etching patterns, good chemical stability and excellent physical properties.

Inactive Publication Date: 2018-03-30
JIANGSU RIJIU OPTOELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing ITO film has poor bonding force between the ITO layer and the resin matrix, high resistivity, poor transmittance and poor chemical stability, which cannot meet the production requirements
In addition, in the case of a single-refractive-index single-layer film growth process, in order to obtain lower reflectivity, high-oxidized ITO with a lower refractive index must be used, which will greatly increase the square resistance of the ITO film, resulting in device Increased waste of electrical energy during work

Method used

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  • ITO conducting film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as figure 1 As shown, a kind of ITO conductive film, this conductive film structure is arranged in sequence from top to bottom with protective layer 60, resin matrix 50, silver nano film layer 40, first ITO conductive film layer 301, second ITO conductive film layer 302 , bonding layer 20 and substrate layer 10; The first ITO conductive film layer 301 and the second ITO conductive film layer 302 are transparent conductive film layers, and the refractive index of the two conductive film layers is different, the first ITO conductive film layer The thickness of the ITO conductive film layer 301 is 20-30nm, the thickness of the second ITO conductive film layer 302 is 10-20nm, the thickness of the resin matrix 50 is 110-140mm, and the thickness of the silver nano film layer 40 is 45-20nm. 55nm, the thickness of the bonding layer 20 is 20-50nm.

Embodiment 2

[0025] Such as figure 1 As shown, a kind of ITO conductive film, this conductive film structure is arranged in sequence from top to bottom with protective layer 60, resin matrix 50, silver nano film layer 40, first ITO conductive film layer 301, second ITO conductive film layer 302 , bonding layer 20 and substrate layer 10; The first ITO conductive film layer 301 and the second ITO conductive film layer 302 are transparent conductive film layers, and the refractive index of the two conductive film layers is different, the first ITO conductive film layer The thickness of the ITO conductive film layer 301 is 20-30nm, the thickness of the second ITO conductive film layer 302 is 10-20nm, the thickness of the resin matrix 50 is 110-140mm, and the thickness of the silver nano film layer 40 is 45-20nm. 55nm, the thickness of the bonding layer 20 is 20-50nm.

[0026] Such as figure 1 As shown, the resin matrix 50 is formed by pressing a polyethylene terephthalate resin matrix 501 an...

Embodiment 3

[0028] Such as figure 1 As shown, a kind of ITO conductive film, this conductive film structure is arranged in sequence from top to bottom with protective layer 60, resin matrix 50, silver nano film layer 40, first ITO conductive film layer 301, second ITO conductive film layer 302 , bonding layer 20 and substrate layer 10; The first ITO conductive film layer 301 and the second ITO conductive film layer 302 are transparent conductive film layers, and the refractive index of the two conductive film layers is different, the first ITO conductive film layer The thickness of the ITO conductive film layer 301 is 20-30nm, the thickness of the second ITO conductive film layer 302 is 10-20nm, the thickness of the resin matrix 50 is 110-140mm, and the thickness of the silver nano film layer 40 is 45-20nm. 55nm, the thickness of the bonding layer 20 is 20-50nm.

[0029] Such as figure 1 As shown, the resin matrix 50 is formed by laminating a polyethylene terephthalate resin matrix 501 ...

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Abstract

The invention discloses an ITO conductive film. A conductive film structure is successively provided with a protection layer, a resin matrix, a silver nanometer film, a first ITO conductive film, a second ITO conductive film, a bonding layer and a base material layer from top to bottom. The first ITO conductive film and the second ITO conductive film are a transparent conductive film. Refractive indexes of the two conductive films are different. A thickness of the first ITO conductive film is 20-30nm, and a thickness of the second ITO conductive film is 10-20nm. A thickness of the resin matrixis 110-140mm. A thickness of the silver nanometer film is 45-55nm. And a thickness of the bonding layer is 20-50nm. A bonding force of the ITO conductive film provided in the invention and the resinmatrix is high, and the ITO conductive film possesses high transmittance, low resistivity and good chemical stability.

Description

technical field [0001] The invention relates to the field of optical technology, in particular to an ITO conductive film. Background technique [0002] In recent years, with the rapid development of semiconductor manufacturing technology, new devices such as photovoltaic cells, flat panel displays, LED lighting, touch screens, etc. have been developed rapidly and widely used in our daily life. These new devices all use transparent conductive films as electrodes on the light-receiving surface or light-emitting surface. If the transmittance of the transparent conductive film in these devices can be improved, the photovoltaic cell can increase the absorption of light to convert more electricity, the light-emitting device can increase the brightness without increasing energy consumption, and the touch screen can increase the brightness and Clarity; similarly, if the resistivity of the transparent conductive film can be reduced, the transmission loss of photovoltaic cells and li...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B1/02
CPCH01B5/14H01B1/02
Inventor 周峰
Owner JIANGSU RIJIU OPTOELECTRONICS LTD
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