Electrostatic discharge protection circuit, integrated circuit chip and electronic equipment

An electrostatic discharge protection and circuit technology, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of ESD protection failure and other problems, achieve the effect of improving ESD protection level, good ESD protection level, and reducing gate potential

Inactive Publication Date: 2018-04-20
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the defects in the prior art, the present invention provides an electrostatic discharge protection circuit, integrated circuit chip and electronic equipment to reduce the gate potential of the discharge device and avoid the failure of the ESD protection capability caused by the excessive local thermal power of the gate problems, thereby increasing the level of ESD protection

Method used

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  • Electrostatic discharge protection circuit, integrated circuit chip and electronic equipment
  • Electrostatic discharge protection circuit, integrated circuit chip and electronic equipment
  • Electrostatic discharge protection circuit, integrated circuit chip and electronic equipment

Examples

Experimental program
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Effect test

Embodiment 1

[0049] Please refer to figure 2 , which shows a schematic diagram of an electrostatic discharge protection circuit provided by Embodiment 1 of the present invention. like figure 2 As shown, the electrostatic discharge protection circuit 20 includes: a transient circuit 21, a voltage divider circuit 22 and a gate drive discharge device 23 connected in parallel between the power pin 11 and the ground pin 12 and sequentially coupled;

[0050]When the transient circuit 21 detects static electricity, the voltage divider circuit 22 is triggered to send a driving signal whose voltage value is less than the power supply voltage value to the gate of the gate drive discharge device 23, and the gate drive discharge device 23 is at the gate. Driven by the above drive signal to discharge static electricity.

[0051] Specifically, the transient circuit 21 is used to detect static electricity. When an electrostatic discharge occurs, a high-voltage pulse will be generated at the power int...

Embodiment 2

[0056] Please refer to image 3 , which shows a schematic diagram of an electrostatic discharge protection circuit provided in Embodiment 2 of the present invention. The electrostatic discharge protection circuit provided in Embodiment 2 of the present invention is implemented on the basis of Embodiment 1, and part of the content will not be repeated here. , please understand it in conjunction with the description of the above-mentioned part of the embodiment, such as image 3 As shown, the electrostatic discharge protection circuit 20 includes: a transient circuit 21 connected in parallel between the power supply pin 11 and the ground pin 12, a voltage divider circuit 22 and a gate drive discharge device 23;

[0057] The transient circuit 21 includes: a capacitor 211, a first resistor 212 and an inverter group 213;

[0058] The voltage dividing circuit 22 includes: a first PMOS transistor 221 and a second resistor 222;

[0059] The gate drive bleeder device 23 includes: a f...

Embodiment 3

[0073] Please refer to Figure 4 , which shows a schematic diagram of an electrostatic discharge protection circuit provided by Embodiment 3 of the present invention. The electrostatic discharge protection circuit provided by Embodiment 3 of the present invention is implemented on the basis of Embodiment 2, and part of the content will not be repeated. , please understand it in conjunction with the description of the second part of the above embodiment, Figure 4 The ESD protection circuit shown with image 3 Compared with the electrostatic discharge protection circuit shown, the structure of the voltage divider circuit 22 and the gate drive discharge device 23 are consistent, and there are differences in the transient circuit 21, such as Figure 4 As shown, the transient circuit 21 includes: a capacitor 211, a first resistor 212 and an inverter group 213;

[0074] The first end of the first resistor 212 is connected to the power supply pin 11, the first end of the capacitor...

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PUM

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Abstract

The invention provides an electrostatic discharge protection circuit, an integrated circuit chip and electronic equipment. The electrostatic discharge protection circuit comprises a transient circuit,a voltage division circuit and a grid drive discharge device connected between a power supply pin and a ground connection pin in parallel and coupled sequentially; when static electricity is detectedby the transient circuit, the voltage division circuit is triggered to send a drive signal of which a voltage value is smaller than a power supply voltage value to a grid electrode of the grid drivedischarge device, and the static electricity is released by the grid drive discharge device under the driving of the drive signal. The grid potential of the discharge device can be effectively reduced, and the failure problem of ESD protective capability caused by excessive grid local heat power is avoided.

Description

technical field [0001] The invention relates to the technical field of electrostatic discharge protection, in particular to an electrostatic discharge protection circuit, an integrated circuit chip and electronic equipment. Background technique [0002] In the process of IC (English full name: Integrated Circuit, Chinese name: integrated circuit) chip production, packaging, testing, transportation, etc., various degrees of electrostatic discharge events will occur. Electrostatic discharge (English full name: Electronic Static Discharge, English abbreviation: ESD) refers to the instantaneous process in which a large amount of charge is poured into the integrated circuit from the outside to the inside when an integrated circuit is floating. When the integrated circuit is discharged, an equivalent high voltage of hundreds or even thousands of volts will be generated, which will break down the gate oxide layer of the input stage in the integrated circuit. With the continuous im...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0266
Inventor 李志国
Owner YANGTZE MEMORY TECH CO LTD
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