RQMSIW-based ultra-compact dual-band band-pass filter

A band-pass filter, dual-band technology, applied in waveguide-type devices, electrical components, circuits, etc., can solve problems such as difficulty, reduced center frequency controllability, large filter area, etc., to achieve good passband performance and size. Compact, frequency-selective effect

Active Publication Date: 2018-04-20
HANGZHOU DIANZI UNIV
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Problems solved by technology

However, due to the inherent mode characteristics of the SIW structure, the current research is limited to the realization of dual-band on the full-mode SIW structure; because, although the research on HMSIW and QMSIW is often compared with the SIW structure, it is limited to the fundamental mode, namely TE101 The electromagnetic characteristics of the mode are similar, but for the high-order mode, the electromagnetic characteristics of the high-order mode of HMSIW and QMSIW are different from those of SIW. Therefore, it is very difficult to realize a dual-band filter based on the structure of QMSIW or HMSIW
The latest SIW dual-mode dual-band filter research is based on the rectangular SIW structure. On the one hand, the designed filter area is large. On the other hand, the ratio of the dual-band center frequency needs to adjust the size of the entire filter, resulting in Reduced controllability of center frequency

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Embodiment Construction

[0043] The present invention will be further described below in conjunction with accompanying drawing.

[0044] Such as figure 1 As shown in (d), the filter consists of three parts, and the thickness of the two layers is h 1 、h 2 A dielectric plate of the same material and a layer of thickness h 0 adhesive layer; when using multi-layer PCB technology processing, because the adhesive layer is very important in the filter of the present invention, the use of the adhesive layer determines the use of the dielectric board, that is, the dielectric constant of the dielectric board must It is very close to the dielectric constant of the adhesive layer. The characteristics of the material of the adhesive layer (dielectric constant is 3.55), so that the dielectric plate of the filter can only use a dielectric plate with a dielectric constant of about 3.55.

[0045] It is because of the addition of the adhesive layer that the second metal surface 7 of the ridge waveguide is separated...

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Abstract

The invention discloses an RQMSIW-based ultra-compact dual-band band-pass filter. The RQMSIW-based ultra-compact dual-band band-pass filter is based on a QMSIW structure, a ridge waveguide is loaded therein, so that the filter generates a resonance characteristic similar to a rectangular cavity, an open circuit strip line is embedded in the lower side of the ridge waveguide, a higher mode, i.e., aTE201 mode, of the filter is excited, dual-band response is generated, and two stubs loaded on the strip line are used for improving performance of a second frequency band. The dual-band filter is realized in the QMSIW structure for the first time, thereby providing a new idea for studying an SIW structure-based dual-band filter.

Description

technical field [0001] The invention belongs to the technical field of wireless communication, and relates to an ultra-compact radio frequency band-pass filter with dual-mode and dual-frequency bands based on a ridge-shaped quarter-mode substrate integrated waveguide (RQMSIW) structure. Background technique [0002] With the rapid development of wireless communication technology, multi-band filters have become an important part of multi-service wireless communication systems. However, dual-band or multi-band BPFs with low insertion loss, compact size, and good passband selectivity are urgently needed. Over the past decade, the emerging substrate-integrated waveguide (SIW) technology has emerged as a promising candidate for wireless transceiver systems due to the advantages of low cost, low profile, relatively high Q, high power handling capability, and high-density integration. [0003] One of the few disadvantages of SIW technology is related to the occupied space of SIW c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/208
CPCH01P1/2082
Inventor 游彬杨增罗国清
Owner HANGZHOU DIANZI UNIV
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