Microwave high-power synthesizer

Abstract

A microwave high-power synthesizer disclosed by the invention is to provide a power synthesizer having a small volume and being capable of inputting and outputting high power in a low-frequency-stagework condition. The implementation of the method comprises the following steps of: arranging a perfectly round hollow metal inner conductor (2) at the center of a square hollow metal outer conductor (1), the inner conductor (2) is a quarter wavelength, a ratio of the length of an inner side of the inner conductor (1) and an external diameter of the inner conductor (2) is 1.74+-0.1, a ratio of thelength of the outer conductor (1) and the inner conductor (2) is not less than 2.11, and a ratio of the diameter of a probe of an output connector (4) and the external diameter of the inner conductor(2) is 0.40-0.42; the top end of the inner conductor (2) is connected with a probe of an input connector (3) through adoption of a welding process, the bottom end of the inner conductor (2) is connected with a probe of the output connector (4) through adoption of the welding process, the probe of the input connector (3) and the probe of the output connector (4) directly couple signals of an electric field, and energy is transmitted in a resonant cavity body structure formed by the outer conductor (1) and the inner conductor (2) in a quasi TEM (transverse electromagnetic mode) form.

Description

technical field [0001] The invention relates to a microwave high-power synthesizer with an output power of 1000W, belonging to the field of microwave power synthesis. Background technique [0002] In recent years, high-power microwaves have been used in a variety of applications: power supply for satellites and space platforms, measurement and control communications for deep space probes, altitude change propulsion systems for orbiters, etc. No matter which application requires huge power support. With the continuous development of semiconductor materials and processes, the output power of microwave devices is increasing. The pulse power of L-band transistors has reached the kilowatt level, and the continuous wave of X-band potassium arsenide field effect transistors has reached tens of watts. The power reaches 500W. Although the operating frequency of high-power devices and the power that can be achieved are getting higher and higher, but limited by the physical characteri...

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Problems solved by technology

[0003] Conventional Wilkinson structure synthesizers are suitable for small power synthesis, and are generally used in a single power amplifier circuit to achieve power synthesis, and its output power is on the order of tens of digits; in recent years, it has been found that there are papers describing power synthesizers using coaxial probe array coupling structures, Due to its air-coupling form, the power bearing capacity is also very limited. When the matching is not good, serious heat will occur, which will reduce its reliability, and the volume is large; although the classic waveguide structure synthesizer can withstand high power, but the structure is low. The volume of the frequency band is very large, it is not easy to install and use, it is more suitable for high power synthesis of higher frequencies

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