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A metal connection constant temperature electromigration test structure

A technology of metal connection and test structure, which is applied in the field of layout design of electromigration test structure, and can solve problems such as difficult to achieve electromigration reliability test

Active Publication Date: 2020-06-16
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention proposes a constant-temperature electromigration test structure for metal wiring, which is used to solve the problem in the prior art that it is difficult to achieve electromigration reliability testing due to the reservoir effect and the high temperature of the metal lead.

Method used

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  • A metal connection constant temperature electromigration test structure
  • A metal connection constant temperature electromigration test structure
  • A metal connection constant temperature electromigration test structure

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Embodiment Construction

[0018] The specific embodiments of the present invention are given below in conjunction with the accompanying drawings, but the present invention is not limited to the following embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0019] The invention is used to solve the problem in the prior art that it is difficult to form holes in the metal test line due to the reservoir effect of the metal test line and the small temperature gradient between the metal connection line and the metal test line, so that it is difficult to achieve electromigration reliability testing. .

[0020] Please refer to figure 2 , figure 2 Shown is a schematic diagram of the structure of the metal wire isoth...

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Abstract

The invention provides a temperature-constant electro-migration test structure of metal connecting lines. The test structure comprises a low-layer metal test wire, metal through holes, lower-layer metal connecting lines, upper-layer metal connecting lines, test metal pads and heat radiation structures. The two ends of the low-layer metal test wire are connected to the lower-layer metal connectinglines respectively, the lower-layer metal connecting lines are connected to the upper-layer metal connecting lines via the metal through holes respectively, the two upper-layer metal connecting linesare connected to the test metal pads respectively, and the heat radiation structures are arranged in the surrounding of the lower and upper metal connecting lines respectively. The temperature-constant electro-migration test structure of metal connecting lines is used to solve the problem that the electro-migration reliability is hard to test due to a reservoir effect and too high temperature of the metal leads.

Description

technical field [0001] The invention relates to the field of layout design of an electromigration test structure, and in particular to a constant-temperature electromigration test structure for metal wiring. Background technique [0002] During the copper interconnection process, conventional constant temperature electromigration test structures usually use the same layer of metal as leads and test lines, such as figure 1 As shown in Fig. 2, the metal test wire generally follows the minimum size design rule, and the metal connection line is relatively wide. When the test current is applied, the Joule heat generated by the metal test wire under high current is used to control the temperature of the test metal wire to reach the target test temperature, so as to implement the electromigration test. But there are two problems: one is the impact of the reservoir effect. The metal test line is directly connected to the wider metal lead. Under the action of electromigration, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544
CPCH01L22/32
Inventor 王焱陈雷刚周柯高金德
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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