Resist removal liquid

A technology of stripping liquid and resist, which is applied in the processing of photosensitive materials, etc., can solve the problems of weak chelation and weak resist stripping force, and achieve the effect of excellent bath life

Active Publication Date: 2018-05-04
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the alkalinity and nucleophilicity are also weak as well as the chelating action, and there is a disadvantage that the resist stripping force is weak compared with resist stripping solutions using alkanolamines of primary or secondary amines.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] N-methylethanolamine is used as secondary amine.

[0072] N-methylethanolamine (MMA) 5.0% by mass

[0073] The polar solvent is a mixture of water and 1,3-dimethyl-2-imidazolidinone.

[0074] 1,3-Dimethyl-2-imidazolinone (DMI) 74.9% by mass

[0075] Water 20.0% by mass

[0076] Hydrazine is used as reducing agent.

[0077] Hydrazine monohydrate (HN·H 2 O) 0.1% by mass

[0078] The above components were mixed and stirred to prepare a sample resist stripping solution of Example 1.

[0079] In addition, 0.1 mass % of hydrazine monohydrate corresponds to 0.064 mass % of hydrazine. The remaining 0.036% by mass of hydrazine monohydrate was water. Therefore, the composition ratio of the above-mentioned water can be said to be 20.036% by mass even including the amount charged in the form of hydrazine monohydrate. In all of the following Examples and Comparative Examples, the same meaning applies when hydrazine monohydrate is used.

Embodiment 2

[0081] N-ethylethanolamine is used as secondary amine.

[0082] N-ethylethanolamine (EEA) 5.0% by mass

[0083] The polar solvent is a mixture of water and 1,3-dimethyl-2-imidazolidinone.

[0084] 1,3-Dimethyl-2-imidazolinone (DMI) 74.9% by mass

[0085] Water 20.0% by mass

[0086] Hydrazine is used as reducing agent.

[0087] Hydrazine monohydrate (HN·H 2 O) 0.1% by mass

[0088] The above components were mixed and stirred to prepare a sample resist stripping solution of Example 2.

[0089] Example 2 is a composition in which N-methylethanolamine (MMA), which is the secondary amine of Example 1, is changed to N-ethylethanolamine (EEA). In addition, 0.1 mass % of hydrazine monohydrate corresponds to 0.064 mass % of hydrazine. The remaining 0.036% by mass of hydrazine monohydrate was water. Therefore, the composition ratio of the above-mentioned water can be said to be 20.036% by mass even including the amount charged in the form of hydrazine monohydrate.

Embodiment 3

[0091] N-methylethanolamine is used as secondary amine.

[0092] N-methylethanolamine (MMA) 5.0% by mass

[0093] The polar solvent is a mixture of water and 1,3-dimethyl-2-imidazolidinone.

[0094] 1,3-Dimethyl-2-imidazolinone (DMI) 70.9% by mass

[0095] Water 24.0% by mass

[0096] Hydrazine is used as reducing agent.

[0097]Hydrazine monohydrate (HN·H 2 O) 0.1% by mass

[0098] The above components were mixed and stirred to prepare a sample resist stripping solution of Example 3.

[0099] Example 3 is a composition in which the ratio of DMI and water in the polar solvent of Example 1 was changed. In addition, 0.1 mass % of hydrazine monohydrate corresponds to 0.064 mass % of hydrazine. The remaining 0.036% by mass of hydrazine monohydrate was water. Therefore, the composition ratio of the above-mentioned water can be said to be 24.036% by mass even including the amount charged in the form of hydrazine monohydrate.

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Abstract

In a production process for semiconductor devices, etc., curing occurs at a higher temperature than conventional production processes, in order to avoid resist curing defects. As a result, a removal liquid having stronger removal force than conventionally available is required. This resist removal liquid: includes a secondary amine, a 1, 3-dimethyl-2-imidazolidinone (DMI) as a polar solvent, and water; incudes hydrazine as an additive; is characterized by the water being at least 10.0% by mass and less than 31.0% by mass; is capable of removing a resist baked at high temperature; and does notcorrode film surfaces or cross-sections.

Description

technical field [0001] The present invention relates to a stripping solution for stripping resists used in the manufacture of display devices such as liquid crystals and organic ELs, and semiconductors. A resist, and furthermore, a resist stripping solution that does not substantially corrode an aluminum film or a copper film. Background technique [0002] Flat panel displays (FPDs) such as liquid crystals and organic EL (Electro-Luminescence) require large screens. On the other hand, small and high-definition screens are required for notebook PCs, tablet PCs, and smartphones. For a large screen, a thin film transistor (TFT: Thin Film Transistor) using Cu wiring or Cu / Mo laminated wiring (hereinafter simply referred to as "Cu wiring") can be used. In addition, for a small high-definition screen, a TFT using Al wiring can be used. Hereinafter, Cu is also called copper, Mo is also called molybdenum, and Al is also called aluminum. [0003] Some panel manufacturers also pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/42
Inventor 渊上真一郎鬼头佑典
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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