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Preparation method of doped semiconductor device and semiconductor device

A technology for semiconductors and devices, applied in the field of semiconductor devices, can solve problems such as damage to semiconductor devices, complex preparation methods of semiconductor devices, and impact on the performance stability of semiconductor devices.

Active Publication Date: 2021-04-23
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes the preparation method of the semiconductor device very complicated, and even the incomplete removal of the carbon film will have a great adverse effect on the current distribution in the semiconductor device, thereby affecting the performance stability of the semiconductor device, and even causing damage to the semiconductor device

Method used

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  • Preparation method of doped semiconductor device and semiconductor device
  • Preparation method of doped semiconductor device and semiconductor device
  • Preparation method of doped semiconductor device and semiconductor device

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with accompanying drawing.

[0020] figure 1 Schematically shows the steps of the method for manufacturing a doped semiconductor device according to the present invention, wherein the semiconductor substrate is SiC.

[0021] exist figure 1 , state 1 schematically shows the state after ion implantation is performed on the SiC substrate 10 . The SiC substrate 10 may include a SiC substrate 11 and a SiC epitaxial layer 12 into which dopant ions 13 are implanted. In one embodiment, the implanted doping element may be Al, or N, P. The concentration of implanted ions can be adjusted according to actual needs. The ion implantation method is well known to those skilled in the art, and will not be repeated here.

[0022] State 2 schematically shows the formation of SiC epitaxial layer 12 in the 3 N 4 Condition of protective layer 20 . Si 3 N 4 The protection layer 20 completely covers the SiC epitaxia...

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Abstract

The invention relates to a preparation method of a doped semiconductor device and a semiconductor device. The method according to the present invention comprises the following steps: step 1, after doping the semiconductor substrate, forming Si on the surface of the semiconductor substrate 3 N 4 protective layer; step two, will have Si 3 N 4 The protective layer of the semiconductor substrate is annealed. According to the method of the present invention, using Si 3 N 4 As an annealing protective layer for semiconductor substrates. After annealing, the Si 3 N 4 layer is used as an insulating layer for semiconductor devices, so that it is not necessary to use Si 3 N 4 Layers are completely removed, which simplifies the production steps.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for preparing a doped semiconductor. The invention also relates to semiconductor devices prepared using this method. Background technique [0002] In the manufacturing process of some semiconductor devices such as IGBT, it is necessary to dope the semiconductor substrate to form N-type semiconductor or P-type semiconductor. For example, ion implantation is performed on a SiC (silicon carbide) semiconductor substrate. [0003] In particular, for SiC semiconductor substrates, the dopant is substantially in the lattice interstitial position. In order to displace these doped ions to the positions of the lattice points, high-temperature activation annealing is required. For example, the annealing temperature for N-type impurities is generally higher than 1400°C-1800°C, and the annealing temperature for P-type impurities is generally 1600°C-1800°C. At such a high annea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/324H01L21/318H01L21/02
CPCH01L21/0217H01L21/324
Inventor 史晶晶李诚瞻周正东吴佳刘国友刘可安
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD