Superlattice doped with magnetic atoms [gete/sb 2 te 3 ] n Materials and their corresponding control methods

A superlattice and atomic technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult Dirac taper regulation of surface states of topological insulators and inability to open Dirac points, and achieve the effect of improving performance.

Active Publication Date: 2020-11-17
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For the above defects or improvement needs of the prior art, the object of the present invention is to provide a superlattice doped with magnetic atoms [GeTe / Sb 2 Te 3 ] n The material and its corresponding control method, in which, by improving the specific types of key doping elements, etc., compared with the existing technology, it can effectively solve the problems that the Dirac cone of the surface state of the topological insulator is not easy to control, and the Dirac point cannot be opened, etc., and The present invention can also produce the energy band spin splitting phenomenon, especially can also realize the energy band spin splitting with the energy band splitting size exceeding 100meV

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  • Superlattice doped with magnetic atoms [gete/sb <sub>2</sub> te <sub>3</sub> ] <sub>n</sub> Materials and their corresponding control methods
  • Superlattice doped with magnetic atoms [gete/sb <sub>2</sub> te <sub>3</sub> ] <sub>n</sub> Materials and their corresponding control methods
  • Superlattice doped with magnetic atoms [gete/sb <sub>2</sub> te <sub>3</sub> ] <sub>n</sub> Materials and their corresponding control methods

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Embodiment 1

[0033] This embodiment selects magnetic atom Fe atom to superlattice material [GeTe / Sb 2 Te 3 ] n Doping simulation calculation, the steps are as follows:

[0034] The first step is to build a suitable superlattice material [GeTe / Sb 2 Te 3 ] n Surface structure:

[0035] Will Sb 2 Te 3 The 001 direction of GeTe is superimposed with the 111 plane of GeTe, and it is established that it is compatible with Sb 2 Te 3 For layered structures with similar structures, select the lattice constant A nine-layer periodic structure with a stacking sequence of Te-Sb-Te-Te-Ge-Ge-Te-Te-Sb- was established using Material studio software.

[0036] In the perpendicular to the superlattice GeTe / Sb 2 Te 3 In the [001] direction, the adjacent Te-Te atomic layer is cut to obtain the surface structure.

[0037] The second step is to select the surface structure for doping of Fe atoms:

[0038] a. Build a 1×1×2 supercell on the surface of the established superlattice, select the position...

Embodiment 2

[0048] This embodiment selects Mn atom pair superlattice material [GeTe / Sb 2 Te 3 ] n Doping simulation calculation, the steps are as follows:

[0049] The first step is to build a suitable superlattice material [GeTe / Sb 2 Te 3 ] n Surface structure:

[0050] Will Sb 2 Te 3 The 001 direction of GeTe is superimposed with the 111 plane of GeTe, and it is established that it is compatible with Sb 2 Te 3 For layered structures with similar structures, select the lattice constant A nine-layer periodic structure with a stacking sequence of Te-Sb-Te-Te-Ge-Ge-Te-Te-Sb- was established using Material studio software.

[0051] In the perpendicular to the superlattice GeTe / Sb 2 Te 3 In the [001] direction, the adjacent Te-Te atomic layer is cut to obtain the surface structure.

[0052] The second step is to select the surface structure for doping of Mn atoms:

[0053] a. Establish a 1×1×2 supercell on the surface of the established superlattice, select the position of the ...

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Abstract

The invention discloses a magnetic atom-doped superlattice [GeTe/Sb 2 Te 3 ] n Materials and corresponding control methods, wherein the material is doped with magnetic atoms; the initial superlattice [GeTe/Sb 2 Te 3 ] n The structure of the material has topological insulation; after doping with magnetic atoms, the topological insulation is regulated by the magnetic atoms, and the initial superlattice [GeTe/Sb 2 Te 3 ] n The time-reversal symmetry possessed by the material is broken, and the magnetic atoms and their adjacent superlattice [GeTe/Sb 2 Te 3 ] n The atoms in the material produce orbital hybridization, making the doped superlattice [GeTe/Sb 2 Te 3 ] n The density of states in the spin-up and spin-down directions of the material has an asymmetric effect at the same time, and induces a magnetic moment. Compared with the prior art, the present invention can effectively solve the problems that the surface state Dirac cone of the topological insulator is difficult to control and the Dirac point cannot be opened by improving the specific types of key doping elements.

Description

technical field [0001] The invention belongs to the technical field of topological insulating materials, and more specifically relates to a superlattice [GeTe / Sb] doped with magnetic atoms 2 Te 3 ] n Materials and corresponding control methods, which can control superlattice materials [GeTe / Sb 2 Te 3 ] n topological insulation properties. Background technique [0002] The discovery of a new state of matter, a topological insulating material, has enabled people to see a new direction in the realization of quantum computing. Topological insulators cannot generate thermal interaction with traditional insulators and semiconductors, but research has found that topological superconductor materials have surface states composed of Majorana fermions after the energy gap is generated, which provides a new direction for the realization of topological quantum computing. At present, the third generation topological insulator material Sb 2 Te 3 、 Bi 2 Te 3 There have been many r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/66
CPCH01L29/66984
Inventor 程晓敏夏泽瑛张瑾冯金龙童浩缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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