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Semiconductor device, manufacturing method, and electronic device

A semiconductor and device technology, applied in the field of semiconductor devices and preparation methods, electronic devices, can solve the problems of zero mark failure, cumbersome process, and additional steps

Active Publication Date: 2020-06-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] MEMS inertial sensors are widely used due to their small size, low cost, and high reliability. In the preparation process of MEMS inertial sensors, CMOS devices are firstly prepared, and there are formed in the first wafer with CMOS devices. Zero mark, after bonding the first wafer and the second wafer formed with the MEMS device, the zero mark will be covered by the second wafer, thus causing zero mark failure
[0005] In addition, the contact hole material layer may be deposited during the MEMS device manufacturing process, and the zero mark will also be covered and invalid after the contact hole material layer is deposited. Therefore, an etching step is also required to expose the zero mark for standard labeling, the process is cumbersome, adding many extra steps

Method used

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  • Semiconductor device, manufacturing method, and electronic device
  • Semiconductor device, manufacturing method, and electronic device
  • Semiconductor device, manufacturing method, and electronic device

Examples

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preparation example Construction

[0049] In order to solve the above-mentioned problems existing in the current technology, the invention provides a method for preparing a semiconductor device, the method comprising:

[0050] providing a first wafer having a layer zero mark formed therein;

[0051] forming a passivation layer on the first wafer to cover the first wafer;

[0052] patterning the passivation layer to form an alignment mark in the passivation layer over the zero layer mark;

[0053] providing a second wafer and bonding to the first wafer;

[0054] patterning the second wafer to form openings exposing the alignment marks;

[0055] A functional material layer is formed on the surface of the opening and the surface of the alignment mark.

[0056] Wherein, the method for forming the zero-layer mark and the alignment mark includes:

[0057] providing a first wafer, in which a plurality of first grooves spaced apart from each other are formed as the zero-layer marks;

[0058] depositing the passivati...

Embodiment 1

[0063] The preparation method of the semiconductor device of the present invention is described in detail below with reference to the accompanying drawings, figure 1 Shows a flow chart of the fabrication process of the semiconductor device of the present invention; Figures 2A-2F A schematic cross-sectional view showing a structure obtained by implementing a method for manufacturing a semiconductor device according to an embodiment of the present invention; image 3 A schematic diagram of an electronic device according to an embodiment of the present invention is shown.

[0064] The invention provides a method for preparing a semiconductor device, such as figure 1 As shown, the main steps of the preparation method include:

[0065] Step S1: providing a first wafer in which a zero-layer mark is formed;

[0066] Step S2: forming a passivation layer on the first wafer to cover the zero-layer mark;

[0067] Step S3: patterning the passivation layer to form an alignment mark in...

Embodiment 2

[0110] The present invention also provides a semiconductor device, which is prepared by the method described in the first embodiment.

[0111] The semiconductor device includes:

[0112] first wafer;

[0113] a zero layer mark located in the first wafer;

[0114] a passivation layer located on the first wafer and filling the zero-layer mark;

[0115] an alignment mark in the passivation layer and above the zero layer mark;

[0116] A second wafer, where the second wafer is integrated with the first wafer through the passivation layer.

[0117] Wherein, an opening is formed in the second wafer to expose the alignment mark.

[0118] Wherein, a functional material layer is further formed on the surface of the opening and the surface of the alignment mark.

[0119] Wherein, the semiconductor device includes an inertial sensor.

[0120] The first wafer 201 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), s...

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Abstract

The invention relates to a semiconductor device, a preparation method and an electronic device. The method comprises the steps of providing a first wafer and forming zero layer marks in the first wafer; forming a passivation layer on the first wafer, thereby covering the zero layer marks; patterning the passivation layer, thereby forming alignment marks in the passivation layer on the zero layer marks; providing a second wafer and jointing the second wafer and the first wafer; patterning the second wafer, thereby forming openings and exposing the alignment marks; and forming function materiallayers on the surfaces of the openings and the surfaces of the alignment marks. According to the semiconductor device, the preparation method and the electronic device, the alignment marks are exposedby the second wafer, and after the function material layers (such as contact hole material layers) are formed, the alignment marks still can be exposed and are not covered, so the problem that the alignment cannot be carried out can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a preparation method, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, MEMS devices manufactured using Micro Electro Mechanical System (MEMS) technology are very attractive. MEMS devices are made of tiny MEMS structures on semiconductor substrates for use as sensors, vibrators, etc. The MEMS structure is provided with a fixed electrode and a movable electrode, and by using deflection of the movable electrode to detect the capacitance or the like generated in the fixed electrode, the characteristics of the MEMS device are obtained. [0003] There are many kinds of MEMS devices, among which, MEMS humidity sensors and pressure sensors have been widely used in fields such as industrial control, automotive electronics, environmental monitoring, and biomedicine, and MEMS accelerometers a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C3/00B81B7/00B81B7/02
CPCB81B7/0009B81B7/02B81C3/001B81C3/005
Inventor 黄风建毛益平刘杰吴悠
Owner SEMICON MFG INT (SHANGHAI) CORP