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A method for uniform glue coating and bonding of monocrystalline silicon rods for integrated circuits

A technology of single crystal silicon rods and bonding methods, which is applied in the direction of coatings, devices for coating liquid on the surface, etc., can solve problems such as different bonding strengths, chipping, and local poor bonding, and achieve uniform bonding strength Effect

Active Publication Date: 2020-11-03
CHONGQING ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, glue A and glue B play different roles in uneven parts, causing the local bonding to be too hard or too soft. After bonding, it may cause the bonding to be weak and cause the stick to drop, or it may cause different bonding strengths during the wire cutting process. Chip vibration or shaking occurs, resulting in large BOW and WARP phenomena
At the same time, a series of problems such as air bubbles produced by glue adjustment affect the level of glue, uneven thickness of glue, etc.
[0005] Secondly, the manual gluing operation will cause uneven gluing thickness, and the local area of ​​the gluing layer is too thick or too thin
The adverse consequences are that the bonding strength is too strong or insufficient, resulting in rod drop and chip drop accidents during slicing, or abnormal vibration due to local poor bonding, resulting in fragments, edge collapse and other abnormalities
In addition, if the difference in local bonding strength is too large, even during cleaning due to inconsistent degumming time or softening degree, chipping or chipping will occur when the silicon wafer is peeled off, which will greatly reduce the slicing yield.

Method used

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  • A method for uniform glue coating and bonding of monocrystalline silicon rods for integrated circuits
  • A method for uniform glue coating and bonding of monocrystalline silicon rods for integrated circuits
  • A method for uniform glue coating and bonding of monocrystalline silicon rods for integrated circuits

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A single crystal silicon rod with a length of 360mm and a diameter of 200mm is bonded. Clean the monocrystalline silicon rod and keep the surface of the crystal rod free of dust. The length of the resin strip is 370mm, the width is 100mm, the arc surface radius of the upper surface is 100mm, and the lowest point is 13mm from the lower surface; the resin strip is completely horizontally placed on the operating table, and the surface of the resin strip is cleaned and kept dust-free. A 0.15mm thick adhesive layer is used to bond the monocrystalline silicon rods. Choose two two-component manual glue guns with a syringe specification of 1:1. The glue is AB glue, and the ratio of AB glue is 1:1; the AB glue rotates 6 turns in the mixing tube and enters the needle of the glue gun. The diameter of the needle of the glue gun is 0.76mm; evenly move the needle to apply glue on the upper surface of the resin bar along the long side, and the glue application distance is 1.52mm. Us...

Embodiment 2

[0036] A single crystal silicon rod with a length of 460mm and a diameter of 200mm is bonded. Clean the monocrystalline silicon rod and keep the surface of the crystal rod free of dust. The length of the resin strip is 470mm, the width is 100mm, the arc surface radius of the upper surface is 100mm, and the lowest point is 13mm from the lower surface; the resin strip is completely horizontally placed on the operating table, and the surface of the resin strip is cleaned and kept dust-free. A 0.5mm thick adhesive layer is used to bond the monocrystalline silicon rods. Choose two two-component manual glue guns with a syringe specification of 1:3. The glue is AB glue, and the ratio of AB glue is 1:3; the AB glue rotates 10 turns in the mixing tube and enters the needle of the glue gun. The diameter of the needle of the glue gun is 2.55mm; evenly move the needle to apply glue on the upper surface of the resin bar along the long side, and the glue application distance is 5.1mm. Usi...

Embodiment 3

[0039] A single crystal silicon rod with a length of 360mm and a diameter of 200mm is bonded. Clean the monocrystalline silicon rod and keep the surface of the crystal rod free of dust. The length of the resin strip is 370mm, the width is 100mm, the arc surface radius of the upper surface is 100mm, and the lowest point is 13mm from the lower surface; the resin strip is completely horizontally placed on the operating table, and the surface of the resin strip is cleaned and kept dust-free. A 0.15mm thick adhesive layer is used to bond the monocrystalline silicon rods. Choose two two-component manual glue guns with a syringe specification of 1:1, use AB glue for the glue, and the ratio of AB glue is 1:1; the AB glue rotates 6 turns in the mixing tube and enters the needle of the glue gun. The diameter of the needle of the glue gun is 0.76mm; evenly move the needle to apply glue on the upper surface of the resin bar along the long side, and the glue application distance is 1.52mm...

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Abstract

A uniform glue smearing adhesion method for a silicon single crystal rod for an integrated circuit is used for adhesion of the silicon single crystal rod before multi-line cutting. A needle cylinder type double-component glue gun is adopted, and adhesive resin is mixed evenly in a glue outlet pipe. Adhesive glue is smeared in the length direction of a resin strip adhesive cambered surface at intervals with a glue outlet needle, and an interval type adhesive glue band is formed. Then glue scraping is conducted perpendicular to the interval type adhesive glue band in the width direction of the circular arc camber of the resin strip adhesive cambered surface with a sinusoid or regular triangle (an equilateral triangle) or rectangular scraping tooth glue scraping plate, uniform stripy adhesiveglue bands are formed, and the adhesive glue bands form a uniform-thickness adhesive glue layer after leveling. The effect of uniform adhesion strength of the silicon single crystal rod and a rubberstrip is achieved. The risk of rod dropping or piece dropping caused by a poor adhesive rod in a linear cutting procedure, or the poor effect of Bow, Warp and TTV standard exceeding caused by chattering generated during cutting due to poor adhesion is avoided, the problem of edge breakage caused by nonuniform strength during degumming is also avoided, and product quality is improved.

Description

technical field [0001] The invention belongs to the field of processing and manufacturing of integrated circuit-level single crystal silicon wafers, in particular to the technical field of bonding single crystal silicon rods after being rounded and cut, and specifically relates to a method and process for uniform glue bonding in the bonding process. Background technique [0002] In the manufacturing process of integrated circuit-level single crystal silicon wafers, multi-wire cutting technology is generally used for slicing large-size single crystal silicon rods. Before wire cutting, the single crystal silicon rods need to be bonded to resin strips for orientation and position fixation. Therefore, the bonding of single crystal silicon rods is the first process of silicon wafer processing and manufacturing, which has a great impact on the processing and yield of subsequent products. The main purpose of bonding single crystal silicon rods is to fix the single crystal silicon r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B05C17/005B05C11/02B05C11/10
CPCB05C11/023B05C11/1005B05C17/00553B05C17/00556
Inventor 刘尊妍张俊宝陈猛
Owner CHONGQING ADVANCED SILICON TECH CO LTD