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Method and chamber component

A component, chamber technology, applied in the direction of electrical components, semiconductor/solid state device manufacturing, plating of overlays, etc., can solve problems such as erosion, adding chamber components, etc.

Active Publication Date: 2018-06-19
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These extreme conditions can corrode chamber components, corrode chamber components, and increase chamber component susceptibility to defects

Method used

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  • Method and chamber component
  • Method and chamber component
  • Method and chamber component

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0077] Example 1-Formation of YO from a single layer of yttrium oxide and yttrium fluoride x F y coating

[0078] The first layer can be made using ALD selected from tris(N,N-bis(trimethylsilyl)amide)yttrium(III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadiene) Alkenyl) yttrium (III), or three (2,2,6,6-tetramethyl-3,5-heptanedione acid) yttrium (III) precursors and selected from H 2 O, O 2 , Or O 3 The second precursor is grown as a monolayer of yttrium oxide. The second layer can be made from ALD precursors namely tris(2,2,6,6-tetramethyl-3,5-peptanedione acid)yttrium(III) and TiF 4 A single combination of yttrium fluoride monolayers. The resulting multi-component coating may include YO x F y , Where x and y depend on the number of repetitions of the first and second layers.

example 2

[0079] Example 2-YAl is formed from a single layer of yttrium oxide and aluminum oxide x O y coating

[0080] The first layer can be made using ALD selected from tris(N,N-bis(trimethylsilyl)amide)yttrium(III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadiene) Alkenyl) yttrium (III), or three (2,2,6,6-tetramethyl-3,5-heptanedione acid) yttrium (III) precursors and selected from H 2 O, O 2 , Or O 3 The second precursor is grown as a monolayer of yttrium oxide. The second layer can be made of aluminum diethyl ethoxide, aluminum tris(ethylmethylamide), aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethyl aluminum, triisobutyl Base aluminum, trimethyl aluminum, or tris(diethylamido) aluminum precursor and selected from H 2 O, O 2 , Or O 3 The second precursor is grown on an alumina monolayer. The resulting multi-component coating may include YAl x O y , Where x and y depend on the number of repetitions of the first and second layers.

[0081] In some...

example 3

[0085] Example 3-YZr formed from a single layer of yttrium oxide and zirconium oxide x O y coating

[0086] The first layer can be made using ALD selected from tris(N,N-bis(trimethylsilyl)amide)yttrium(III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadiene) Alkenyl) yttrium (III), or three (2,2,6,6-tetramethyl-3,5-heptanedione acid) yttrium (III) precursors and selected from H 2 O, O 2 , Or O 3 The second precursor is grown as a monolayer of yttrium oxide. The second layer can be made of zirconium bromide (IV), zirconium chloride (IV), zirconium (IV) tert-butoxide, tetrakis (diethylamido) zirconium (IV), tetrakis (dimethyl Amido) zirconium (IV) or tetrakis (ethyl methyl amido) zirconium (IV) precursor and selected from H 2 O, O 2 , Or O 3 The second precursor is grown as a monolayer of zirconia. The resulting multi-component coating can include YZr x O y , Where x and y depend on the number of repetitions of the first and second layers.

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Abstract

The invention relates to a method and a chamber component. A multi-component coating composition for a surface of a semiconductor process chamber component comprises at least one first film layer of ayttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component by using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component by using an atomic layer deposition process, wherein the multi-component coating compositionis selected from the group consisting of YOxFy, YAlxOy, YZrxOy and YZrxAlyOz.

Description

[0001] This application is a divisional application of a Chinese patent application with the filing date of April 27, 2017, the application number being 201710288672.0, and the title of "Atomic Layer Deposition of Protective Coatings for Semiconductor Process Chamber Components". [0002] Related application [0003] This application claims priority to the pending U.S. Provisional Patent Application 62 / 328,588 filed on April 27, 2016, which is incorporated herein by reference. Technical field [0004] Embodiments of the present disclosure relate to methods for preparing protective coatings for semiconductor process chamber components using atomic layer deposition (ALD), multi-component protective coatings, and semiconductor processes coated with multi-component protective coatings Chamber parts. Background technique [0005] Various manufacturing processes expose semiconductor process chamber components to high temperatures, high-energy plasmas, mixtures of corrosive gases, high stre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/40C23C16/30
CPCC23C16/30C23C16/403C23C16/405C23C16/45544C23C16/45563C23C16/40C23C16/45531C23C28/042C23C16/4404C23C16/45529H01L21/02205H01L21/0228C23C16/4408
Inventor D·芬威克J·Y·孙
Owner APPLIED MATERIALS INC