Transient voltage suppressor and manufacturing method thereof

A technology of transient voltage suppression and manufacturing method, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of large size of bidirectional transient voltage suppressor, high cost of chip placement, unsuitable package, etc., to achieve The effect of reducing the difficulty of production, high chip area utilization, and chip size compression

Pending Publication Date: 2018-06-22
BEIJING YANDONG MICROELECTRONICS
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

like Figure 2c As shown, since two chips need to be placed on the base island in this bidirectional transient voltage suppressor, it is easy to cause the probability of packaging defects to increase, so that the cost of chip placement is relatively high; during the packaging process, the two

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The present invention is described below based on examples, but the present invention is not limited to these examples. In the following detailed description of the embodiments of the present invention, some specific details are described in detail, and those skilled in the art can fully understand the present invention without the description of these details. In order to avoid obscuring the essence of the present invention, well-known methods, procedures, and flow charts are not described in detail.

[0045] In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown in the drawings. The flowcharts and block diagrams in the accompanying drawings illustrate the possible system framework, functions and operations of the systems, methods, and devices of the embodiments of the present invention, and the blocks an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Resistivityaaaaaaaaaa
Resistivityaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor comprises a first doping type of semiconductor substrate, a first doping type of first epitaxial layer, a first doping type of second epitaxial layer, a plurality of first doping regions and a plurality of second doping regions, wherein the second epitaxial layer is arrangedon a first surface of the semiconductor substrate and covers the first epitaxial layer, the plurality of first doping regions are formed in the semiconductor substrate, each second doping region is formed in the second epitaxial layer or penetrates through the second epitaxial layer and is connected with the corresponding first doping region, the plurality of first doping regions, the plurality ofsecond doping regions, the semiconductor substrate and the second epitaxial layer are used for forming a bidirectional suppression circuit, and the bidirectional suppression circuit comprises a firstrectification diode, a second rectification diode, a first transient suppression diode and a second transient suppression diode. The transient voltage suppressor provided by the invention has a bidirectional voltage suppression function, is low in capacitance and small in volume and is simple to fabricate, and electrodes are respectively led out of a front surface and a back surface.

Description

technical field [0001] The present invention relates to the technical field of semiconductor microelectronics, and more specifically, to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] Transient Voltage Suppressor (TVS) is a high-efficiency circuit protection device that is commonly used at present. Its appearance is the same as that of ordinary diodes, but its special structure and process design enable it to absorb waves up to several thousand watts. surge power. The working mechanism of the transient voltage suppressor is: under reverse application conditions, when the transient voltage suppressor is subjected to a high-energy large pulse, its working impedance will quickly drop to an extremely low conduction value, thereby allowing large current flow through, while clamping the voltage at a predetermined level, the general response time is only 10 -12 seconds, so it can effectively protect the precision components in the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0292H01L27/0296
Inventor 周源郭艳华李明宇张欣慰
Owner BEIJING YANDONG MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap