Transient voltage suppressor and manufacturing method thereof

Abstract

The invention discloses a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor comprises a first doping type of semiconductor substrate, a first doping type of first epitaxial layer, a first doping type of second epitaxial layer, a plurality of first doping regions and a plurality of second doping regions, wherein the second epitaxial layer is arrangedon a first surface of the semiconductor substrate and covers the first epitaxial layer, the plurality of first doping regions are formed in the semiconductor substrate, each second doping region is formed in the second epitaxial layer or penetrates through the second epitaxial layer and is connected with the corresponding first doping region, the plurality of first doping regions, the plurality ofsecond doping regions, the semiconductor substrate and the second epitaxial layer are used for forming a bidirectional suppression circuit, and the bidirectional suppression circuit comprises a firstrectification diode, a second rectification diode, a first transient suppression diode and a second transient suppression diode. The transient voltage suppressor provided by the invention has a bidirectional voltage suppression function, is low in capacitance and small in volume and is simple to fabricate, and electrodes are respectively led out of a front surface and a back surface.

Description

technical field [0001] The present invention relates to the technical field of semiconductor microelectronics, and more specifically, to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] Transient Voltage Suppressor (TVS) is a high-efficiency circuit protection device that is commonly used at present. Its appearance is the same as that of ordinary diodes, but its special structure and process design enable it to absorb waves up to several thousand watts. surge power. The working mechanism of the transient voltage suppressor is: under reverse application conditions, when the transient voltage suppressor is subjected to a high-energy large pulse, its working impedance will quickly drop to an extremely low conduction value, thereby allowing large current flow through, while clamping the voltage at a predetermined level, the general response time is only 10 -12 seconds, so it can effectively protect the precision components in the...

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Problems solved by technology

like Figure 2c As shown, since two chips need to be placed on the base island in this bidirectional transient voltage suppressor, it is easy to cause the probability of packaging defects to increase, so that the cost of chip placement is relatively high; during the packaging process, the two A metal wire needs to be punched at each channel end, which also increases the cost; at the same time, because the integrated package of multiple chips requires a large space, the size of the entire bidirectional transient voltage suppressor is large, which is not suitable for smaller packages.

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