A crystal back thinning method and used circular jig

Abstract

The present invention proposes a method for thinning the back of the crystal, which includes the following steps: placing a circular jig, sticking a film, cutting the tape film, grinding the back of the wafer, moving the wafer to a cassette, acid etching the back of the wafer, tearing off the film, Wafer backside metal deposition. The present invention further discloses a circular jig used in the crystal back thinning method. The circular jig has a hollow ring structure and is divided into an upper part and a lower part. The circular jig has a gap. Adopting the crystal back thinning method of the present invention can realize the fine control of the grinding area, and simplify the wafer thinning process at the same time. Fragmentation issues due to wafer contact with carrier during wafer transfer and acid etch.

Description

technical field [0001] The invention relates to a crystal back thinning method and a circular jig used therein. Background technique [0002] In the manufacture of integrated circuits, semiconductor silicon materials are important substrate materials for integrated circuits due to their rich resources, low manufacturing costs, and good manufacturability. From the cross-sectional structure of integrated circuits, most integrated circuits are manufactured on the shallow surface layer of silicon base material. Due to the requirements of the manufacturing process, high requirements are placed on the dimensional accuracy, geometric accuracy, surface cleanliness and surface microlattice structure of the wafer. Therefore, in hundreds of processes, thinner wafers cannot be used, and only wafers with a certain thickness can be used to transfer and tape out during the process. Usually, before the integrated circuit is packaged, it is necessary to remove a certain thickness of the ex...

AI Technical Summary

Problems solved by technology

[0003] However, in the traditional back thinning process, when the thickness of the wafer reaches 150 μm, it is very easy to be damaged, especially when the edge of the wafer is in contact with the cassette, the damage of the wafer is more likely to occur. In the prior art, generally adopt The following two methods avoid the wafer breakage problem in the wafer back thinning process:

[0006] However, the above two methods have the problems of high cost, complicated processing, and difficulty in finely controlling the grinding area.

Images