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A kind of power module and its manufacturing method

A technology of a power module and a manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of difficult substrate camber control, low module heat dissipation efficiency, and unreliable sealing. Achieve the effect of improving heat dissipation efficiency, eliminating aging problems and reducing thermal resistance

Active Publication Date: 2019-12-27
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of this, the purpose of the present invention is to provide a power module and its manufacturing method, which can solve the technical problems of difficulty in controlling the camber of the substrate of the existing power module, low heat dissipation efficiency of the module, unreliable sealing and easy leakage of liquid

Method used

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  • A kind of power module and its manufacturing method
  • A kind of power module and its manufacturing method
  • A kind of power module and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] as attached Figure 5 As shown, a specific embodiment of a power module includes: a chip 1 , a substrate 4 for arranging the chip 1 , and a packaging case 10 for packaging the chip 1 and the substrate 4 on a liquid cooling radiator 13 . Wherein, the liner 4 further includes: a ceramic layer 5, a front metallization layer 6, a back metallization layer 7 and a pin-fin array 8, as shown in the attached Figure 6 shown. The front metallization layer 6 is arranged on the upper surface of the ceramic layer 5 , the back metallization layer 7 is arranged on the lower surface of the ceramic layer 5 , and the ceramic layer 5 is located between the front metallization layer 6 and the back metallization layer 7 . The pin-fin array 8 is located on the lower surface of the ceramic layer 5 , and the pin-fin array 8 and the ceramic layer 5 are integrally structured. A connecting layer 9 is arranged between the back metallization layer 7 and the upper surface of the liquid cooling rad...

Embodiment 2

[0073] A method for manufacturing a power module as described in Embodiment 1, comprising the following steps:

[0074] S101) Connecting the chip 1 (including the IGBT chip and the FRD chip) to the substrate 4 having a pin-fin array structure by means of welding or sintering;

[0075] S102) Realize the interconnection between the chip 1 on the liner 4 and the front metallization layer 6 by wire 2 bonding;

[0076] S103) Connect the liner plate 4 that has completed the above step S102 to the liquid cooling radiator 13 by welding or sintering;

[0077] S104) Install the encapsulation case 10 integrated with the busbar terminal 12 on the liquid cooling radiator 13 by means of sealant and screw fastening;

[0078] S105) Connect the pin end of the busbar terminal 12 to the front metallization layer 6 of the liner 4 by means of solder welding or ultrasonic welding;

[0079] S106 ) Fill the inside of the packaging case 10 with insulating potting compound, so as to realize potting p...

Embodiment 3

[0081] Another method for manufacturing a power module as described in Embodiment 1 includes the following steps:

[0082] S201) Connecting the chip 1 (including the IGBT chip and the FRD chip) to the substrate 4 having a pin-fin array structure by means of welding or sintering;

[0083] S202) Connect the liner 4 that has completed the above step S201 to the liquid cooling radiator 13 by welding or sintering;

[0084] S203) Realize the interconnection between the chip 1 on the liner 4 and the front metallization layer 6 by wire 2 bonding;

[0085] S204) Install the encapsulation case 10 integrated with the busbar terminal 12 on the liquid cooling radiator 13 by means of sealant and screw fastening;

[0086] S205) Connect the pin end of the busbar terminal 12 to the front metallization layer 6 of the liner 4 by means of solder welding or ultrasonic welding;

[0087] S206 ) Fill the inside of the packaging shell 10 with insulating potting glue, so as to realize potting protect...

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Abstract

The invention discloses a power module and a manufacturing method thereof. The power module includes: a chip, a liner for arranging the chip, and a package shell for packaging the chip and the liner on a liquid cooling radiator. The liner includes: a ceramic layer, a front metallization layer, a back metallization layer and pin-fin arrays. The front metallization layer is arranged on the upper surface of the ceramic layer, and the back metallization layer is arranged on the lower surface of the ceramic layer. The pin-fin array is located on the lower surface of the ceramic layer, and the pin-fin array and the ceramic layer are integrally structured. The liner is arranged on the upper surface of the liquid cooling radiator by means of welding or sintering. The invention can solve the technical problems of difficulty in controlling the camber of the base plate of the existing power module, low heat dissipation efficiency of the module, unreliable sealing and easy liquid leakage.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a power module structure integrating a liquid cooling radiator and a manufacturing method thereof. Background technique [0002] Traditional power modules, such as a typical IGBT module package structure as attached figure 1 As shown, the power module 100 is mainly composed of a chip 1 , a substrate 4 (including: a front copper clad layer 26 , a rear copper clad layer 27 and a ceramic layer 5 ), a substrate 24 , and a packaging shell 10 . Among them, the package case 10 further includes a tube shell 11 and a busbar terminal 12, and the chip 1 including IGBT and FRD is welded on the backing plate 4 of a ceramic structure covered with a metallization layer on both sides, and the chip is realized by bonding the wire 2. 1 and the electrical connection of the metal circuit layer on the surface of the liner. The liner 4 is connected to the substrate 24 through the substrate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/473H01L21/48
CPCH01L21/4882H01L23/473H01L2224/48227H01L2224/4846H01L2224/73265H01L2924/00014H01L2224/45099
Inventor 方杰窦泽春彭勇殿吴义伯常桂钦莫若曾雄童颜罗海辉
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD