Array substrate, manufacturing method, display panel and display device

Abstract

The invention discloses an array substrate, comprising two kinds of thin film transistors, specifically comprising a first active layer formed on the substrate; a first gate insulating layer covering the first active layer; and a first gate insulating layer formed on the first active layer. A first gate and a second gate arranged in the same layer on a gate insulating layer; a second gate insulating layer covering the first gate and the second gate; a first gate formed on the second insulating layer Two active layers and a second source and drain, the second source and drain are electrically connected to the second active layer; an interlayer insulating layer covering the second active layer and the second source and drain; forming The first source and drain on the interlayer insulating layer, the first source and drain are electrically connected to the first active layer. The array substrate, manufacturing method and display device provided in this embodiment can reduce the number of masks in the process of manufacturing two kinds of thin film transistors, and solve the problem of process incompatibility.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method, a display panel and a display device. Background technique [0002] In recent years, low-temperature polysilicon thin-film transistors (LTPS TFT) and oxide thin-film transistors (Oxide TFT) have attracted much attention in the display industry, and each has its own advantages. LTPS TFT has the advantages of high mobility and fast charging, and Oxide TFT has the advantage of low leakage current. If the advantages of these two materials can be combined, the user experience of display products will be greatly improved. However, due to the need to combine the two processes of LTPS and Oxide, the process will inevitably become complicated, that is, more Mask processes need to be used. In order to reduce production costs, it is necessary to reduce the number of Masks in the LTPS+Oxide TFT structure, but due to the possible process ...

AI Technical Summary

Problems solved by technology

However, due to the need to combine the two processes of LTPS and Oxide, the process will inevitably become complicated, that is, more Mask processes need to be used

In order to reduce production costs, it is necessary to reduce the number of Masks in the LTPS+Oxide TFT structure, but due to the possible process incompatibility of LTPS TFT and Oxide TFT processes, it is very difficult to reduce the number of Masks

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